Exploring performance characteristics via edge configuration in black phosphorene TFETs

Tunneling field-effect transistors (TFETs) based on 2D materials have emerged as promising candidates for low-power devices. However, many TFETs utilizing 2D materials suffer from the limitation of low ON current. Black phosphorene, a 2D material exhibiting a high ON current and also an appropriate band gap, is known as a notable candidate. This paper investigates simulation results of armchair/zigzag phosphorene nanoribbon tunneling field-effect transistors (APNR-TFET/ZPNR-TFET). Our approach relies on the combination of density functional-based tight binding with the nonequilibrium Green’s function. Results encompass energy band structure, I–V characteristics, on/off current ratio, Power-Delay Product (PDP), delay time and cutoff frequency. It is shown that ZPNR-TFETs possess a higher [Formula: see text]/[Formula: see text] ratio, PDP and intrinsic gain compared to APNR-TFETs. Hence, the ZPNR-TFET is better suited for digital applications. Due to the increased [Formula: see text] in APNR-TFET, this structure exhibits a higher cutoff frequency, resulting in enhanced performance in analog applications.