56 Gbps externally modulated widely tunable lasers with SOA boosters heterogeneously integrated on silicon

We demonstrate externally modulated widely tunable lasers co-integrated with semiconductor optical amplifiers (SOAs) heterogeneously integrated on silicon. The widely tunable laser enables continuous single-mode operation over a tuning range of approximately 40 nm, with a side-mode suppression ratio (SMSR) of at least 50 dB and an average waveguide-coupled optical power of 5 mW. The integrated electro-absorption modulator (EAM) exhibits an extinction ratio (ER) of 16 dB when reversed biased at -2 V. The bit-error-rate (BER) measurements conducted across the available optical bandwidth (15 nm) showcase error-free transmission at 32 Gbps using non-return-to-zero (NRZ) signals for the majority of wavelengths in a back-to-back (B2B) configuration. Additionally, transmission measurements over distances of up to 10 km through a standard single-mode fiber (SSMF) have been successfully demonstrated. Dynamic extinction ratio (DER) values exceeding 4.5 dB are achieved for all wavelengths. Open-eye diagrams were measured up to 56 Gbps. These results demonstrate that this compact mono-epitaxial externally modulated tunable laser with integrated optical amplification can be a cost-effective transmitter solution for dense wavelength division multiplexing (DWDM) metropolitan and access networks.

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Publication Details

Journal
Optics Express
Published
2024-09-05
DOI
https://doi.org/10.1364/oe.533266
Citations
4
Primary Topic
Photonic and Optical Devices
Type
article
Field-Weighted Citation Impact
0.83

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article

56 Gbps externally modulated widely tunable lasers with SOA boosters heterogeneously integrated on silicon

Stéphane Malhouitre, Claire Besançon, Amin Souleiman, J. Décobert et al.
4 citations
Optics Express
Photonic and Optical Devices
0.83
article

56 Gbps externally modulated widely tunable lasers with SOA boosters heterogeneously integrated on silicon

Stéphane Malhouitre, Claire Besançon, Amin Souleiman, J. Décobert, Joan Manel Ramírez, David Bitauld, Nicolas Vaissière, B.-E. Benkelfat, Karim Hassan, Delphine Néel, K. Merghem
article en
4 citations

Abstract

We demonstrate externally modulated widely tunable lasers co-integrated with semiconductor optical amplifiers (SOAs) heterogeneously integrated on silicon. The widely tunable laser enables continuous single-mode operation over a tuning range of approximately 40 nm, with a side-mode suppression ratio (SMSR) of at least 50 dB and an average waveguide-coupled optical power of 5 mW. The integrated electro-absorption modulator (EAM) exhibits an extinction ratio (ER) of 16 dB when reversed biased at -2 V. The bit-error-rate (BER) measurements conducted across the available optical bandwidth (15 nm) showcase error-free transmission at 32 Gbps using non-return-to-zero (NRZ) signals for the majority of wavelengths in a back-to-back (B2B) configuration. Additionally, transmission measurements over distances of up to 10 km through a standard single-mode fiber (SSMF) have been successfully demonstrated. Dynamic extinction ratio (DER) values exceeding 4.5 dB are achieved for all wavelengths. Open-eye diagrams were measured up to 56 Gbps. These results demonstrate that this compact mono-epitaxial externally modulated tunable laser with integrated optical amplification can be a cost-effective transmitter solution for dense wavelength division multiplexing (DWDM) metropolitan and access networks.

Optics ExpressVol. 32(21)
Nokia (Finland) (FI), Thales (United Kingdom) (GB), Institut Polytechnique de Paris (FR), III V Lab (FR), Institut des langues et cultures d'Europe, Amérique, Afrique, Asie et Australie (FR), Université Grenoble Alpes (FR)
Horizon 2020 Framework Programme
Affordable and clean energy
Openalex Percentile: Top 27%
Photonic and Optical Devices
0.83
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