Nanoscale subsurface imaging by non-steady-state electron beam-driven scanning thermoelectric capacitance microscopy

Nanoscale subsurface characterization technologies based on the scanning electron microscope platform offer incomparable advantages of nondestructiveness and penetration depths up to the micrometer scale. However, the electron beam can serve not just as a mechanical/electrical excitation source but also as an excellent nanoscale thermal excitation source, which can facilitate the development of nanoscale subsurface imaging methods based on the Seebeck effect in semiconducting materials. In this work, a subsurface nondestructive imaging technology, scanning thermoelectric capacitance microscopy (STeCM), was developed based on the interaction between a non-steady-state electron beam and semiconducting materials, exploiting the Seebeck effect. In STeCM, a square wave-modulated hot electron beam with huge kinetic energy excites a “thermal wave” in the subsurface local region of the semiconducting sample. The heated local region, acting as a thermoelectric capacitor, undergoes cyclic charging and discharging, leading to the generation of periodic current due to non-equilibrium carrier migration. The second-order harmonic component of this current is demodulated to visualize embedded local thermal/thermoelectric inhomogeneities. Amazingly, for STeCM sample, only a smooth or polished surface is required, eliminating the need for any microfabrication, which will effectively decrease the configuration difficulty in the experiment. STeCM offers an alternative subsurface nondestructive imaging technology for more efficient, simple, and robust characterization.

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Publication Details

Journal
Applied Physics Letters
Published
2024-09-02
DOI
https://doi.org/10.1063/5.0221638
Primary Topic
Advanced Thermoelectric Materials and Devices
Type
article
Field-Weighted Citation Impact
0.00

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Nanoscale subsurface imaging by non-steady-state electron beam-driven scanning thermoelectric capacitance microscopy

Lidong Chen, Kunqi Xu, Weiwei Yang, Xun Shi et al.
Applied Physics Letters
Advanced Thermoelectric Materials and Devices
article

Nanoscale subsurface imaging by non-steady-state electron beam-driven scanning thermoelectric capacitance microscopy

Lidong Chen, Kunqi Xu, Weiwei Yang, Xun Shi, Huarong Zeng, Kunyu Zhao
article en

Abstract

Nanoscale subsurface characterization technologies based on the scanning electron microscope platform offer incomparable advantages of nondestructiveness and penetration depths up to the micrometer scale. However, the electron beam can serve not just as a mechanical/electrical excitation source but also as an excellent nanoscale thermal excitation source, which can facilitate the development of nanoscale subsurface imaging methods based on the Seebeck effect in semiconducting materials. In this work, a subsurface nondestructive imaging technology, scanning thermoelectric capacitance microscopy (STeCM), was developed based on the interaction between a non-steady-state electron beam and semiconducting materials, exploiting the Seebeck effect. In STeCM, a square wave-modulated hot electron beam with huge kinetic energy excites a “thermal wave” in the subsurface local region of the semiconducting sample. The heated local region, acting as a thermoelectric capacitor, undergoes cyclic charging and discharging, leading to the generation of periodic current due to non-equilibrium carrier migration. The second-order harmonic component of this current is demodulated to visualize embedded local thermal/thermoelectric inhomogeneities. Amazingly, for STeCM sample, only a smooth or polished surface is required, eliminating the need for any microfabrication, which will effectively decrease the configuration difficulty in the experiment. STeCM offers an alternative subsurface nondestructive imaging technology for more efficient, simple, and robust characterization.

Applied Physics LettersVol. 125(10)
Chinese Academy of Sciences (CN), Shanghai Institute of Ceramics (CN), University of Chinese Academy of Sciences (CN)
National Key Research and Development Program of China
Openalex Percentile: Top 91%
Advanced Thermoelectric Materials and Devices
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