A molecular ferroelectric thin film of imidazolium perchlorate on silicon

Molecular ferroelectrics have garnered significant attention due to their structural tunability, low synthesis temperature, and high flexibility. Herein, we successfully synthesized imidazole perchlorate (ImClO<sub>4</sub>) single crystals and high-quality, highly-oriented thin films on Si substrates. These films demonstrated a high inverse piezoelectric coefficient of 55.7 pm/V. Two types of domain bands were observed: type-I bands tilted ~60<sup>°</sup> relative to the horizontal axis, and type-II bands positioned perpendicular to the horizontal axis. Under a + 20 V bias, type-I bands showed a reduction and detachment of 180<sup>°</sup> domain walls to form a needle-like domain. It extended toward the band boundary after applying -20 V bias, which grew along the boundary upon contact. In contrast, type-II bands showed straight domain wall motion and displayed a higher piezoresponse than type-I bands. The growth of high quality molecular ferroelectric thin films on Si substrates paves the way for the development of on-chip devices.

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Publication Details

Journal
Nature Communications
Published
2024-09-05
DOI
https://doi.org/10.1038/s41467-024-52207-7
Citations
6
Primary Topic
Acoustic Wave Resonator Technologies
Type
article
Field-Weighted Citation Impact
1.11

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article

A molecular ferroelectric thin film of imidazolium perchlorate on silicon

Fu Lv, Zijian Hong, Yu Huang, Qian Li et al.
6 citations
Nature Communications
Acoustic Wave Resonator Technologies
1.11
article

A molecular ferroelectric thin film of imidazolium perchlorate on silicon

Fu Lv, Zijian Hong, Yu Huang, Qian Li, W. Li, Tiantian Chen, Congqin Zheng, Yongjun Wu, Xin Li
article en
6 citations

Abstract

Molecular ferroelectrics have garnered significant attention due to their structural tunability, low synthesis temperature, and high flexibility. Herein, we successfully synthesized imidazole perchlorate (ImClO<sub>4</sub>) single crystals and high-quality, highly-oriented thin films on Si substrates. These films demonstrated a high inverse piezoelectric coefficient of 55.7 pm/V. Two types of domain bands were observed: type-I bands tilted ~60<sup>°</sup> relative to the horizontal axis, and type-II bands positioned perpendicular to the horizontal axis. Under a + 20 V bias, type-I bands showed a reduction and detachment of 180<sup>°</sup> domain walls to form a needle-like domain. It extended toward the band boundary after applying -20 V bias, which grew along the boundary upon contact. In contrast, type-II bands showed straight domain wall motion and displayed a higher piezoresponse than type-I bands. The growth of high quality molecular ferroelectric thin films on Si substrates paves the way for the development of on-chip devices.

Nature CommunicationsVol. 15(1)
Zhejiang University (CN), Taizhou University (CN), Tsinghua University (CN)
National Natural Science Foundation of China, Zhejiang University, Fundamental Research Funds for the Central Universities
Openalex Percentile: Top 25%
Acoustic Wave Resonator Technologies
1.11
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