Anomalous shift and optical vorticity in the steady photovoltaic current

Light can be rectified to a direct current by inducing real-space displacements (shifts) of quasiparticles. While the shift due to photon absorption ($s\phantom{\rule{0}{0ex}}h\phantom{\rule{0}{0ex}}i\phantom{\rule{0}{0ex}}f\phantom{\rule{0}{0ex}}t\phantom{\rule{0}{0ex}}e\phantom{\rule{0}{0ex}}x\phantom{\rule{0}{0ex}}c$) has received the prevailing attention, shifts due to intraband relaxation and interband recombination have been overlooked in recent decades. Here, the authors demonstrate that these shifts have a quantum geometric origin and can surpass $s\phantom{\rule{0}{0ex}}h\phantom{\rule{0}{0ex}}i\phantom{\rule{0}{0ex}}f\phantom{\rule{0}{0ex}}t\phantom{\rule{0}{0ex}}e\phantom{\rule{0}{0ex}}x\phantom{\rule{0}{0ex}}c$ by orders of magnitude. The theory is applied to a case study of the three-dimensional semiconductor BiTeI.

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Publication Details

Journal
Physical review. B./Physical review. B
Published
2024-09-05
DOI
https://doi.org/10.1103/physrevb.110.115108
Citations
19
Primary Topic
Neural Networks and Reservoir Computing
Type
article
Field-Weighted Citation Impact
6.60

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article

Anomalous shift and optical vorticity in the steady photovoltaic current

Penghao Zhu, A. Alexandradinata
19 citations
Physical review. B./Physical review. B
Neural Networks and Reservoir Computing
6.60
article

Anomalous shift and optical vorticity in the steady photovoltaic current

Penghao Zhu, A. Alexandradinata
article en
19 citations

Abstract

Light can be rectified to a direct current by inducing real-space displacements (shifts) of quasiparticles. While the shift due to photon absorption ($s\phantom{\rule{0}{0ex}}h\phantom{\rule{0}{0ex}}i\phantom{\rule{0}{0ex}}f\phantom{\rule{0}{0ex}}t\phantom{\rule{0}{0ex}}e\phantom{\rule{0}{0ex}}x\phantom{\rule{0}{0ex}}c$) has received the prevailing attention, shifts due to intraband relaxation and interband recombination have been overlooked in recent decades. Here, the authors demonstrate that these shifts have a quantum geometric origin and can surpass $s\phantom{\rule{0}{0ex}}h\phantom{\rule{0}{0ex}}i\phantom{\rule{0}{0ex}}f\phantom{\rule{0}{0ex}}t\phantom{\rule{0}{0ex}}e\phantom{\rule{0}{0ex}}x\phantom{\rule{0}{0ex}}c$ by orders of magnitude. The theory is applied to a case study of the three-dimensional semiconductor BiTeI.

Physical review. B./Physical review. BVol. 110(11)
University of Illinois Urbana-Champaign (US), University of California, Santa Cruz (US), The Ohio State University (US)
National Science Foundation
Affordable and clean energy
Openalex Percentile: Top 3%
Neural Networks and Reservoir Computing
6.60
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