SiC Power Module Packaging Using Printed Electronics Materials and Processes

Advanced packaging solutions for wide bandgap power devices, such as silicon carbide (SiC) MOSFETs, can help realize their full potential. Additively printed electronics present a promising solution to enable SiC packaging, providing an approach to reduce the parasitic inductance, miniaturize, and explore countless form factors. Although printed electronics have gained popularity in diverse electronic manufacturing fields, their application in high-power electronics remains largely unexplored. Herein, we aim to develop a planar high-power SiC module (>1.2 kV) using printed electronics materials and processes. Moreover, we aim to assess the feasibility and reliability of printed electronics for power packaging. The results of device-package simulations, materials testing, and processing showed promising potential in meeting requirements for SiC power modules. Functional testing of the power modules shows performance that is in line with traditionally packaged modules. The functional test vehicles also pass high voltage isolation and partial discharge (PD) tests. However, the high contact resistance between the printed conductors and module surfaces is a limiting factor in achieving low ON-resistance and high current capabilities. Tailored surfaces with pressure-assisted curing helped overcome this limit and achieve high current-carrying capacity and low ON-resistance. Finally, the stress testing shows mixed results, and further improvement is needed.