High-performance GaSb planar PN junction detector
Abstract This paper examines GaSb short-wavelength infrared detectors employing planar PN junctions. The fabrication was based on the Zn diffusion process and the diffusion temperature was optimized. Characterization revealed a 50% cut-off wavelength of 1.73 μ m, a maximum detectivity of 8.73 × 10 10 cm·Hz 1/2 /W, and a minimum dark current density of 1.02 × 10 −5 A/cm 2 . Additionally, a maximum quantum efficiency of 60.3% was achieved. Subsequent optimization of fabrication enabled the realization of a 320 × 256 focal plane array that exhibited satisfactory imaging results. Remarkably, the GaSb planar detectors demonstrated potential in low-cost short wavelength infrared imaging, without requiring material epitaxy or deposition.
Authors
- Yifan Shan
- Mengchen Liu
- Yingqiang Xu (ORCID: https://orcid.org/0000-0002-1200-7280)
- Derang Cao (ORCID: https://orcid.org/0000-0002-4636-9239)
- Guowei Wang (ORCID: https://orcid.org/0000-0002-4660-3750)
- Chuang Wang (ORCID: https://orcid.org/0000-0002-3696-2856)
- Shihao Zhang (ORCID: https://orcid.org/0000-0003-2439-4078)
- Ruoyu Xie
- Donghai Wu (ORCID: https://orcid.org/0000-0003-0327-0332)
- Dongwei Jiang (ORCID: https://orcid.org/0000-0002-7225-9922)
- Shuo Wang (ORCID: https://orcid.org/0000-0002-4224-3807)
- Hongyue Hao
- Zhichuan Niu (ORCID: https://orcid.org/0000-0002-9566-6635)
- Yuanzhi Cui
- Xiaoyu Wang
- Jing Zhang (ORCID: https://orcid.org/0000-0002-7650-4702)
Institutions
- Qingdao University (CN)
- Chinese Academy of Sciences (CN)
- University of Chinese Academy of Sciences (CN)
Publication Details
- Journal
- Journal of Semiconductors
- Published
- 2024-09-01
- DOI
- https://doi.org/10.1088/1674-4926/24040024
- Citations
- 5
- Primary Topic
- Semiconductor Quantum Structures and Devices
- Type
- article
- Field-Weighted Citation Impact
- 1.69