Light Logic Gates with GaAs‐Based Structures
In article number 2400173, Feyza Sonmez and co-workers present novel logic gates using TH-HELLISH (top-hat hot-electron light-emission and lasing in semiconductor heterostructures) devices. The cover image depicts the TH-HELLISH device’s structure, including its contact configuration. To provide an example of the device’s operation, pulsed voltage is applied to input terminals A and B, while input C is grounded. This configuration results in light emission from the device. Furthermore, the presence of the three logic gate symbols shows that the TH-HELLISH device could potentially function as an XOR, OR, and NAND logic gate.
Authors
- Burcu Arpapay (ORCID: https://orcid.org/0000-0002-0784-560X)
- S. Ardali (ORCID: https://orcid.org/0000-0002-0422-7865)
- F. Sonmez (ORCID: https://orcid.org/0000-0002-9337-7856)
- U. Serincan (ORCID: https://orcid.org/0000-0002-6305-4343)
- Selman Mutlu (ORCID: https://orcid.org/0000-0002-4443-3524)
- E. Tiraş (ORCID: https://orcid.org/0000-0003-1711-3637)
- Ayşe Aygül Ergürhan (ORCID: https://orcid.org/0000-0001-6445-0156)
- Ayşe Erol (ORCID: https://orcid.org/0000-0003-4454-4651)
- Onur Şenel
Institutions
- Eskisehir Technical University (TR)
Publication Details
- Journal
- physica status solidi (RRL) - Rapid Research Letters
- Published
- 2024-09-01
- DOI
- https://doi.org/10.1002/pssr.202470023
- Primary Topic
- Semiconductor Lasers and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00