Investigation of Potential Impact of Nitridation Process on Single Event Gate Rupture Tolerance in SiC MOS Capacitors

Single Event Gate Rupture (SEGR) is one of the catastrophic failures caused by heavy ions in power MOS devices. In this study, n-type SiC MOS capacitors representing the gate structure generally used in SiC power MOSFETs were used to conduct heavy ion irradiation tests to clarify the SEGR mechanism. The Linear Energy Transfer (LET) dependence of the critical electric field ( E cr ) for these capacitors was evaluated with two different oxidation processes in accumulation to confirm whether the oxidation process affects SEGR tolerance. We found that the E cr value and slopes of the LET dependence for SEGR between DRY samples and DRY + POA samples were approximately consistent. We also simulated SEGR and studied its mechanism. The simulation results suggested that SEGR for SiC MOS capacitors is caused by carriers in electron-hole pairs generated by a heavy ion instead of gate electric field fluctuation.

Authors

Institutions

Publication Details

Journal
Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena
Published
2024-08-21
DOI
https://doi.org/10.4028/p-xwa3h1
Primary Topic
Silicon Carbide Semiconductor Technologies
Type
article
Field-Weighted Citation Impact
0.00
Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

Investigation of Potential Impact of Nitridation Process on Single Event Gate Rupture Tolerance in SiC MOS Capacitors

Takahiro Makino, Akinori Takeyama, Shinsuke Harada, Naoki Ohtani et al.
Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena
Silicon Carbide Semiconductor Technologies
article

Investigation of Potential Impact of Nitridation Process on Single Event Gate Rupture Tolerance in SiC MOS Capacitors

Takahiro Makino, Akinori Takeyama, Shinsuke Harada, Naoki Ohtani, Takeshi Ohshima, H. Shindou, Junji Senzaki, Eiji Kagoshima, Keisuke Kobayashi, Tomoka Suematsu, Shunki Narita, Misa Takahashi, Jun Saito, Norio Nemoto, Hirokazu Fujiwara, Takeshi Tawara, Manami Iwata
article en

Abstract

Single Event Gate Rupture (SEGR) is one of the catastrophic failures caused by heavy ions in power MOS devices. In this study, n-type SiC MOS capacitors representing the gate structure generally used in SiC power MOSFETs were used to conduct heavy ion irradiation tests to clarify the SEGR mechanism. The Linear Energy Transfer (LET) dependence of the critical electric field ( E cr ) for these capacitors was evaluated with two different oxidation processes in accumulation to confirm whether the oxidation process affects SEGR tolerance. We found that the E cr value and slopes of the LET dependence for SEGR between DRY samples and DRY + POA samples were approximately consistent. We also simulated SEGR and studied its mechanism. The simulation results suggested that SEGR for SiC MOS capacitors is caused by carriers in electron-hole pairs generated by a heavy ion instead of gate electric field fluctuation.

Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomenaVol. 358
Japan Aerospace Exploration Agency (JP), National Institutes for Quantum Science and Technology (JP), Mirion Technologies (France) (FR), National Institute of Advanced Industrial Science and Technology (JP)
Affordable and clean energy
Openalex Percentile: Top 88%
Silicon Carbide Semiconductor Technologies
DOIOpen Access PDFOpenAlex
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.