Complementary Two Dimensional Carrier Profiles of 4H-SiC MOSFETs by Scanning Spreading Resistance Microscopy and Scanning Capacitance Microscopy
The suitability of scanning probe methods based on atomic force microscopy (AFM) measurements is explored to investigate with high spatial resolution the elementary cell of 4H-SiC power MOSFETs. The two-dimensional (2D) cross-sectional maps demonstrated a high spatial resolution of about 5 nm using the scanning spreading resistance microscopy (SSRM) capabilities. Furthermore, the scanning capacitance microscopy (SCM) capabilities enabled visualizing the fluctuations of charge carrier concentration across the different parts of the MOSFETs elementary cell.
Authors
- Fabrizio Roccaforte (ORCID: https://orcid.org/0000-0001-8632-0870)
- A. Guarnera
- Mario S. Alessandrino
- Mario Saggio
- Edoardo Zanetti
- Filippo Giannazzo (ORCID: https://orcid.org/0000-0002-0074-0469)
- Patrick Fiorenza (ORCID: https://orcid.org/0000-0002-9633-7892)
- Marco Zignale
- Beatrice Carbone
Institutions
- STMicroelectronics (Czechia) (CZ)
- Consorzio Roma Ricerche (IT)
Publication Details
- Journal
- Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena
- Published
- 2024-08-21
- DOI
- https://doi.org/10.4028/p-9efkbt
- Citations
- 2
- Primary Topic
- Silicon Carbide Semiconductor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.42
Funders
- European Commission
- HORIZON EUROPE Framework Programme