A Voltage Adjustable Diode Integrated SiC Trench MOSFET with Barrier Control Gate
Bipolar degradation of the intrinsic bipolar body diode is one of the most important reliability problems associated with SiC MOSFET. In this paper, a voltage adjustable diode (VAD) integrated SiC trench MOSFET (VAD-TMOS) with barrier control gate (BCG) is proposed to overcome this issue. Compared to the intrinsic bipolar body diode of conventional SiC trench MOSFET (C-TMOS), VAD has 57% reduction of the on-state voltage drop. Furthermore, the reverse recovery charge ( Q rr ) of VAD-TMOS is only 1.21 μC/cm 2 , whereas the value of C-TMOS is 3.84 μC/cm 2 . The miller charge ( Q gd ) of VAD-TMOS is reduced by about 6 × in comparison with that of C-TMOS owing to the reduction of the overlap region of gate and drain terminal. The better third quadrant and fast switching capability make SiC VAD-TMOS a potential candidate as a next generation of power switch.
Authors
- Xu Li (ORCID: https://orcid.org/0000-0001-5671-000X)
- Xuan Li
- Yi Wen (ORCID: https://orcid.org/0000-0001-5599-1946)
- Xiao Chuan Deng (ORCID: https://orcid.org/0000-0001-9471-620X)
- Song Jun Li
Institutions
- University of Electronic Science and Technology of China (CN)
Publication Details
- Journal
- Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena
- Published
- 2024-08-21
- DOI
- https://doi.org/10.4028/p-hs3sd9
- Primary Topic
- Silicon Carbide Semiconductor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Natural Science Foundation of China
- Natural Science Foundation of Sichuan Province
- Basic and Applied Basic Research Foundation of Guangdong Province