Design and investigation of gaussian doped junction free SMDG and TMDG-TFET for analog/RF applications

Abstract This research investigates four variants of Gaussian Doped (GD) Double Gate Single Material and Tri-Material Junction-Free Tunnel-Field-Effect-Transistors (GD-DG-JF-TFETs) to optimize their performance in analog and RF applications. The analysis is conducted using the Sentaurus Synopsis TCAD simulation tool, reveals a Subthreshold Swing (SS) as low as 38 mV/dec, exceptionally higher cut-off-frequency ( f t ) and maximum-oscillation-frequency ( <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:msub> <mml:mrow> <mml:mi>f</mml:mi> </mml:mrow> <mml:mrow> <mml:mi>max</mml:mi> </mml:mrow> </mml:msub> </mml:math> ) of 516 GHz and 895 GHz, respectively. The proposed TMDG-JF-TFET enhances band-to-band tunneling between the drain and source regions, resulting in an extremely low-off-state-current ( I off ) of 9.6 fA and large-on-state current ( I ON ) of 6.7 mA in Permittivity of high-k ( HfO 2 = 25) and low-k ( SiO 2 = 3.8) based structures.Compared to conventional SMDG technologies, the TMDG structures exhibits 36% reduction in SS, a 16% improvement in f t , an 18% enhancement in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:msub> <mml:mrow> <mml:mi>f</mml:mi> </mml:mrow> <mml:mrow> <mml:mi>max</mml:mi> </mml:mrow> </mml:msub> </mml:math> and 17% increase in I ON . These improvements demonstrate that TMDG-based TFETs are superior devices for ultra-low-power-integrated-circuit-applications.