Behavior of defects in GaN avalanche photodiodes grown on GaN substrates

Abstract GaN avalanche photodiodes grown on GaN substrates were successfully fabricated. These devices displayed a low dark current, measuring <80 pA at a reverse bias of 82.0 V. Notably, the response spectrum of the devices showed new out-of-band response peaks with increasing reverse bias. Moreover, at high reverse bias, the devices emitted visible light. These phenomena were attributed to inherent defects within the materials. The defect level fitted from the tunneling currents closely matched the experimental value, indicating that the defect-assisted tunneling effect, with a defect level at 0.127 eV relative to the conduction band, contributed to the out-of-band response peak in the response spectrum. The Franz–Keldysh effect led to a redshift in the response spectrum. Additionally, the Mg-related deep energy level situated approximately 0.498 eV above the valence band, facilitated radiative recombination at high reverse bias. Meanwhile, the device’s luminescent image displayed a consistently square shape, suggesting uniform avalanche breakdown throughout the device.