A Broadband High-Efficiency GaN Transistor-Based Rectifier With Variable Phase Shift

This article proposes a new method for expanding the operating bandwidth of transistor-based rectifiers. The standard continuous inverse class-GF is used as the core operating mode, and the relationship between phase shift and input/output impedances is constructed, thereby obtaining the available phase shift range corresponding to the expected rectification efficiency. It allows a variable range of phase shift, rather than a fixed 180°. This variable phase shift range greatly releases the design of the broadband matching, providing the possibility to expand the bandwidth of the rectifier. To verify the effectiveness of the proposed method, this work designs a broadband high-efficiency rectifier based on a GaN transistor. The test results show that within the operating frequency range of 1.8–2.8 GHz, a rectification efficiency of 60%–88% is achieved when the dc load is <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$75\Omega $ </tex-math></inline-formula> and the input power is 40 dBm.