Polarity of homoepitaxial ZnO films grown by Nd:YAG pulsed laser deposition

We investigate the stability of the polar surface of ZnO films grown homoepitaxially on atomically flat ZnO (0001¯) O-face substrates by neodymium yttrium aluminum garnet (Nd:YAG) pulsed laser deposition (PLD). For films grown in the temperature range from 500 to 700 °C, ion scattering spectroscopy showed that the film surface termination was the same as the ZnO substrate. Even for a Mg0.2Zn0.8O/ZnO superlattice, no polarity reversal occurred, indicating that the ZnO (0001¯) O-face is highly stable, despite the film surface sputtering caused by the high kinetic energy of the PLD plume generated by the Nd:YAG laser.

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Publication Details

Journal
Journal of Applied Physics
Published
2024-09-03
DOI
https://doi.org/10.1063/5.0223495
Citations
4
Primary Topic
ZnO doping and properties
Type
article
Field-Weighted Citation Impact
0.47

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article

Polarity of homoepitaxial ZnO films grown by Nd:YAG pulsed laser deposition

Mikk Lippmaa, Iwao Hosako, Norihiko Sekine, Toshihiro Sato et al.
4 citations
Journal of Applied Physics
ZnO doping and properties
0.47
article

Polarity of homoepitaxial ZnO films grown by Nd:YAG pulsed laser deposition

Mikk Lippmaa, Iwao Hosako, Norihiko Sekine, Toshihiro Sato, Takuro Dazai, Ryota Takahashi, Tatsuya Masuda, Hideomi Koinuma
article en
4 citations

Abstract

We investigate the stability of the polar surface of ZnO films grown homoepitaxially on atomically flat ZnO (0001¯) O-face substrates by neodymium yttrium aluminum garnet (Nd:YAG) pulsed laser deposition (PLD). For films grown in the temperature range from 500 to 700 °C, ion scattering spectroscopy showed that the film surface termination was the same as the ZnO substrate. Even for a Mg0.2Zn0.8O/ZnO superlattice, no polarity reversal occurred, indicating that the ZnO (0001¯) O-face is highly stable, despite the film surface sputtering caused by the high kinetic energy of the PLD plume generated by the Nd:YAG laser.

Journal of Applied PhysicsVol. 136(9)
Nihon University (JP), The University of Tokyo (JP), National Institute of Information and Communications Technology (JP)
JST-Mirai Program
Affordable and clean energy
Openalex Percentile: Top 39%
ZnO doping and properties
0.47
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