Spin injection at MgB2-superconductor/ferromagnet interface

There is a growing interest in mixing spintronics and superconductivity to develop original energy-efficient nonvolatile memory and logic devices. Research works conducted so far have mostly focused on superconductor with critical temperature Tc lower than 10 K. Here, we report on the growth and characterization of MgB2/Ni80Fe20 and MgB2/Co bilayers, where Tc of the MgB2 layer is of the order of 30 K. Ferromagnetic resonance was undertaken to analyze the spin pumping into MgB2. The larger magnetization at saturation in Co, as compared to Ni80Fe20, induces a smaller spin pumping contribution to the damping when MgB2 is normal. A spin pumping reduction was observed for both bilayers when MgB2 becomes superconductor and is attributed to the opening of the superconducting gap. The present results show that MgB2 thin films could be suitable to implement superconducting spintronic at 30 K, which is not only relevant for future technological development but also relaxes experimental constraints related to low-temperature investigations.