A new thermo-optical system with a fractional Caputo operator for a rotating spherical semiconductor medium immersed in a magnetic field

Purpose Understanding the mechanical and thermal behavior of materials is the goal of the branch of study known as fractional thermoelasticity, which blends fractional calculus with thermoelasticity. It accounts for the fact that heat transfer and deformation are non-local processes that depend on long-term memory. The sphere is free of external stresses and rotates around one of its radial axes at a constant rate. The coupled system equations are solved using the Laplace transform. The outcomes showed that the viscoelastic deformation and thermal stresses increased with the value of the fractional order coefficients. Design/methodology/approach The results obtained are considered good because they indicate that the approach or model under examination shows robust performance and produces accurate or reliable results that are consistent with the corresponding literature. Findings This study introduces a proposed viscoelastic photoelastic heat transfer model based on the Moore-Gibson-Thompson framework, accompanied by the incorporation of a new fractional derivative operator. In deriving this model, the recently proposed Caputo proportional fractional derivative was considered. This work also sheds light on how thermoelastic materials transfer light energy and how plasmas interact with viscoelasticity. The derived model was used to consider the behavior of a solid semiconductor sphere immersed in a magnetic field and subjected to a sudden change in temperature. Originality/value This study introduces a proposed viscoelastic photoelastic heat transfer model based on the Moore-Gibson-Thompson framework, accompanied by the incorporation of a new fractional derivative operator. In deriving this model, the recently proposed Caputo proportional fractional derivative was considered. This work also sheds light on how thermoelastic materials transfer light energy and how plasmas interact with viscoelasticity. The derived model was used to consider the behavior of a solid semiconductor sphere immersed in a magnetic field and subjected to a sudden change in temperature.