Nonvolatile Ferroelectric Control of Electronic Properties of Bi₂Te₃

Abstract Nonvolatile electric-field control of the unique physical characteristics of topological insulators (TIs) is essential for fundamental research and development of practical electronic devices. Electrically tunable transport properties through electrostatic gates have been extensively investigated. However, the relatively weak and volatile tunability limits its practical applications in spintronics. Here, we demonstrate the nonvolatile electric-field control of Bi 2 Te 3 transport properties via constructing ferroelectric Rashba architectures, i.e., 2D Bi 2 Te 3 /α-In 2 Se 3 ferroelectric field effect transistors. Through switching the polarization states of the α-In 2 Se 3 , the Fermi level, resistance, Fermi wave vector, carrier mobility, carrier density, and magnetoresistance (MR) of the Bi 2 Te 3 film can be effectively modulated. Importantly, a shift of Fermi level toward band gap with surface state occurs as switching to negative polarization state, the contribution of the surface state to the conductivity increases, thereby increasing carrier mobility and electron coherence length significantly, and resulting in enhanced WAL effect. These results provide a nonvolatile electric-field control method to tune the electronic properties of TI and can further extend to the quantum transport properties.