Total Ionizing Dose Effect and Radiation Hardness Analysis on Low-Leakage ESD Devices Fabricated on Double SOI Technology
The impact of the total ionizing dose (TID) on low leakage electrostatic discharge (ESD) protection devices fabricated on the 180-nm double silicon on insulator (DSOI) technology is investigated through experiments and numerical simulations. The devices under tests (DUTs) are MOS-DIO, MOS-SCR, and gate-grounded NMOSFET (GGNMOS). The transmission line pulse (TLP) measurements were carried out before and right after <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">60</sup>Co gamma ray irradiation. The results show that the radiation-induced charges and traps mainly located in the top buried oxide (BOX1) can lead to deterioration of ESD characteristics, such as leakage and triggering voltage. After being irradiated to a dose of 300 krad(Si), the leakage of GGNMOS increases by about three orders of magnitude, and in addition, its snapback characteristic vanishes. Radiation hardness on DSOI-based ESD devices is analyzed based on experiment and simulation results, which implies that the negative voltage on back-gate electrode can mitigate the deterioration of ESD characteristics caused due to irradiation.
Authors
- Tianchun Ye (ORCID: https://orcid.org/0000-0002-2384-9037)
- Bo Li (ORCID: https://orcid.org/0000-0003-4905-2744)
- Lei Shu (ORCID: https://orcid.org/0000-0002-5688-1447)
- Yong Xu (ORCID: https://orcid.org/0000-0002-6800-234X)
- Lili Ding (ORCID: https://orcid.org/0000-0001-5718-8882)
- Fanyu Liu (ORCID: https://orcid.org/0000-0002-6154-4971)
- Zhengsheng Han (ORCID: https://orcid.org/0000-0003-2087-0356)
- Xiaojing Li (ORCID: https://orcid.org/0000-0002-5692-8997)
- Qiwen Zheng (ORCID: https://orcid.org/0000-0002-8246-4284)
- Siyuan Chen (ORCID: https://orcid.org/0000-0003-3402-6236)
- Jing Wan (ORCID: https://orcid.org/0000-0002-6339-4006)
- Cheng Zhang (ORCID: https://orcid.org/0009-0005-0586-1365)
- Xiao Yu
Institutions
- Xidian University (CN)
- Chinese Academy of Sciences (CN)
- Fudan University (CN)
- Nanjing University of Posts and Telecommunications (CN)
- Xinjiang Technical Institute of Physics & Chemistry (CN)
- Institute of Microelectronics (CN)
- Northwest Institute of Nuclear Technology (CN)
- University of Chinese Academy of Sciences (CN)
- State Key Laboratory of ASIC and System
Publication Details
- Journal
- IEEE Transactions on Electron Devices
- Published
- 2024-09-03
- DOI
- https://doi.org/10.1109/ted.2024.3449249
- Citations
- 1
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 0.21
Funders
- National Natural Science Foundation of China