Polarization-Stabilized 1130 nm VCSEL Arrays: Performance and Scalability
This paper presents an in-depth evaluation of 1130 nm VCSEL devices, including single emitters and arrays produced using industrial III-V semiconductor fabrication processes. The study focuses on electro-optical performance and device longevity, revealing wall plug efficiencies of approximately 32% at 25 °C for single junction devices. A detailed comparison between polarization-stabilized and non-stabilized devices highlights that polarization-stabilized VCSELs maintain a consistent polarization extinction ratio of around −15 dB, regardless of their modal behavior. Additionally, we introduce a model predicting the scaling of arrays to achieve watt-level power outputs, optimizing optical aperture, pitch, and mesa count for specific applications. This analysis underlines the potential of these devices for advanced sensing and data transmission applications.
Authors
- Negar Gheshlaghi (ORCID: https://orcid.org/0000-0003-1036-3377)
- B. Gronau
- Johanna Kolb
- Andrea Ott
- Alexander van der Lee
- Daniela Stange (ORCID: https://orcid.org/0000-0002-2545-5832)
- Tobias Pusch
- Roman Körner
- Stephan Gronenborn
Institutions
- TRUMPF (Germany) (DE)
Publication Details
- Journal
- IEEE Journal of Selected Topics in Quantum Electronics
- Published
- 2024-09-03
- DOI
- https://doi.org/10.1109/jstqe.2024.3453489
- Citations
- 4
- Primary Topic
- Semiconductor Lasers and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.83