Tailoring of Ferroelectric Coercive Field and Polarization With Ferroelectric and Antiferroelectric Hf<sub>x</sub>Zr<sub>1–x</sub>O<sub>2</sub> Bilayer Structure

In this letter, the advantages of an antiferroelectric (AFE) and ferroelectric (FE) bilayer stack made of Hf<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub>Zr<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{{1}-{\text {x}}}$ </tex-math></inline-formula>O<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>(HZO) with different compositions were reported. Compared to the monolayer ferroelectric control sample, Mo/FE/Mo, the Mo/FE/AFE/Mo, and Mo/AFE/FE/Mo stacks exhibited a significant decrease in the coercive field (E<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{\text {c}}\text {)}$ </tex-math></inline-formula>. A higher dielectric constant of AFE increased the voltage distribution across the FE layer in the bilayer HZO structure, leading to a decrease in E<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">c</sub>. Furthermore, the capacitor with Mo/AFE/FE/Mo exhibited 28% higher polarization, P<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">r</sub> (2P<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{\text {r}} \,\, = \,\, 45.9~\mu $ </tex-math></inline-formula>C/cm<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$^{{2}}\text {)}$ </tex-math></inline-formula>, than the control sample, while this significant increase of P<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">r</sub> was not observed in the capacitor with Mo/FE/AFE/Mo. Electrical measurements of the capacitors with FE and AFE having various thicknesses showed that the dielectric constants and phase composition depend on the deposition sequence. A higher orthogonal phase ratio was achieved in the Mo/AFE/FE/Mo stack compared to the Mo/FE/AFE/Mo stack, resulting in higher polarization. Furthermore, bilayer capacitors with Mo/AFE/FE/Mo showed more robust long time reliability, such as endurance and retention.

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Publication Details

Journal
IEEE Electron Device Letters
Published
2024-08-20
DOI
https://doi.org/10.1109/led.2024.3435381
Citations
7
Primary Topic
Ferroelectric and Negative Capacitance Devices
Type
article
Field-Weighted Citation Impact
1.46

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article

Tailoring of Ferroelectric Coercive Field and Polarization With Ferroelectric and Antiferroelectric HfxZr1–xO2 Bilayer Structure

Rino Choi, Manh-Cuong Nguyen, An Hoang-Thuy Nguyen, Geon Park et al.
7 citations
IEEE Electron Device Letters
Ferroelectric and Negative Capacitance Devices
1.46
article

Tailoring of Ferroelectric Coercive Field and Polarization With Ferroelectric and Antiferroelectric HfxZr1–xO2 Bilayer Structure

Rino Choi, Manh-Cuong Nguyen, An Hoang-Thuy Nguyen, Geon Park, Anh-Duy Nguyen, Jaekyeong Kim, Kyungsoo Hwang, Siun Song, Hoyeon Shin, Hyun‐Su Kim
article en
7 citations

Abstract

In this letter, the advantages of an antiferroelectric (AFE) and ferroelectric (FE) bilayer stack made of Hf<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub>Zr<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{{1}-{\text {x}}}$ </tex-math></inline-formula>O<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>(HZO) with different compositions were reported. Compared to the monolayer ferroelectric control sample, Mo/FE/Mo, the Mo/FE/AFE/Mo, and Mo/AFE/FE/Mo stacks exhibited a significant decrease in the coercive field (E<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{\text {c}}\text {)}$ </tex-math></inline-formula>. A higher dielectric constant of AFE increased the voltage distribution across the FE layer in the bilayer HZO structure, leading to a decrease in E<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">c</sub>. Furthermore, the capacitor with Mo/AFE/FE/Mo exhibited 28% higher polarization, P<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">r</sub> (2P<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{\text {r}} \,\, = \,\, 45.9~\mu $ </tex-math></inline-formula>C/cm<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$^{{2}}\text {)}$ </tex-math></inline-formula>, than the control sample, while this significant increase of P<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">r</sub> was not observed in the capacitor with Mo/FE/AFE/Mo. Electrical measurements of the capacitors with FE and AFE having various thicknesses showed that the dielectric constants and phase composition depend on the deposition sequence. A higher orthogonal phase ratio was achieved in the Mo/AFE/FE/Mo stack compared to the Mo/FE/AFE/Mo stack, resulting in higher polarization. Furthermore, bilayer capacitors with Mo/AFE/FE/Mo showed more robust long time reliability, such as endurance and retention.

IEEE Electron Device LettersVol. 45(10)
Inha University (KR)
Korea Institute for Advancement of Technology, Korea Basic Science Institute, Ministry of Science and ICT, South Korea
Openalex Percentile: Top 18%
Ferroelectric and Negative Capacitance Devices
1.46
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