A High-Efficiency Push–Pull Parallel-Circuit Class-E/F₃ Power Amplifier for Harmonic Suppression

In this article, a high-efficiency push-pull parallel-circuit (PC) Class-E/F3 power amplifier (PA) with a harmonic suppression network for radio frequency identification (RFID) applications is presented. With the double reactance compensation technique (D-RCT), the PA’s design of broadband performance is achieved. In addition, a low-pass (LP) Chebyshev technique is introduced to provide a simple fundamental matching network (MN). Finally, a high-efficiency push-pull PC Class-E/F3 PA is fabricated and measured. The experimental results illustrate that an output power (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${P} _{\text {out}}$ </tex-math></inline-formula>) is from 36.83 to 41.84 dBm and 82.35%–91.32% drain efficiency (DE) operating from 5 to 10.5 MHz frequency range, which agrees well with the simulation results.