Matching Physical and Electrical Measurements (OBIC) to Simulation (FEM) on High Voltage Bipolar Diodes
This paper presents for the first time a comparison between experimental measurements of Optical Beam Induced Current (OBIC) and finite element simulations on high-voltage bipolar diodes. Two peripheral protection structures were chosen: a simple MESA protection and a MESA + JTE combination. Comparable experimental and simulated results were obtained in both cases.
Authors
- Dominique Planson (ORCID: https://orcid.org/0000-0002-1617-8757)
- Camille Sonneville (ORCID: https://orcid.org/0000-0001-8094-5618)
- Pascal Bevilacqua
- Hervé Morel (ORCID: https://orcid.org/0000-0001-7866-0437)
- Pierre Brosselard (ORCID: https://orcid.org/0009-0000-3254-9354)
- Bertrand Vergne
- Mihai Lazar (ORCID: https://orcid.org/0000-0002-3641-1122)
Institutions
- Université Claude Bernard Lyon 1 (FR)
- Université de Technologie de Troyes (FR)
- Centre de Nanosciences et de Nanotechnologies (FR)
- Laboratoire Ampère (FR)
- Institut Franco-Allemand de Recherches de Saint-Louis (FR)
- Institut National des Sciences Appliquées de Lyon (FR)
Publication Details
- Journal
- Key engineering materials
- Published
- 2025-09-10
- DOI
- https://doi.org/10.4028/p-0v5tye
- Primary Topic
- Silicon Carbide Semiconductor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Agence Nationale de la Recherche