28 nm FDSOI embedded PCM exhibiting near zero drift at 12 K for cryogenic SNNs

Seeking to circumvent conventional computing bottlenecks, hardware alternatives, from brain-inspired designs to cryogenic quantum systems, necessitate integrating emerging non-volatile memories. Yet, the immaturity and unreliability of cryogenic-compatible memories hinder scalable computing advancements. This study characterizes 28 nm FD-SOI substrate-embedded Ge-rich Ge2Sb2Te5 phase change memories (ePCMs) down to 12 K to overcome these hurdles. It reveals that ePCMs is cryogenic compatible and can encode multiple resistance states with minimal drift, essential for advanced computing solutions. Through simulations, the ePCM’s impact on a spiking neural network (SNN) performing MNIST classification is evaluated. The SNN maintains high accuracy for extended periods of 2 years at cryogenic temperatures, while an accuracy drop of 10.8% is observed at room temperature. These results highlight the potential of multilevel ePCMs in brain-inspired cryogenic computing applications, offering a promising avenue for the evolution of unconventional computing systems.

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Publication Details

Journal
npj Unconventional Computing
Published
2024-09-02
DOI
https://doi.org/10.1038/s44335-024-00008-y
Citations
9
Primary Topic
Advanced Memory and Neural Computing
Type
article
Field-Weighted Citation Impact
1.88

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article

28 nm FDSOI embedded PCM exhibiting near zero drift at 12 K for cryogenic SNNs

Pierre-Antoine Mouny, João Henrique Quintino Palhares, Yann Beilliard, Jury Sandrini et al.
9 citations
npj Unconventional Computing
Advanced Memory and Neural Computing
1.88
article

28 nm FDSOI embedded PCM exhibiting near zero drift at 12 K for cryogenic SNNs

Pierre-Antoine Mouny, João Henrique Quintino Palhares, Yann Beilliard, Jury Sandrini, Lorena Anghel, Philippe Galy, Nikhil Garg, Dominique Drouin, F. Arnaud, Fabien Alibart
article en
9 citations

Abstract

Seeking to circumvent conventional computing bottlenecks, hardware alternatives, from brain-inspired designs to cryogenic quantum systems, necessitate integrating emerging non-volatile memories. Yet, the immaturity and unreliability of cryogenic-compatible memories hinder scalable computing advancements. This study characterizes 28 nm FD-SOI substrate-embedded Ge-rich Ge2Sb2Te5 phase change memories (ePCMs) down to 12 K to overcome these hurdles. It reveals that ePCMs is cryogenic compatible and can encode multiple resistance states with minimal drift, essential for advanced computing solutions. Through simulations, the ePCM’s impact on a spiking neural network (SNN) performing MNIST classification is evaluated. The SNN maintains high accuracy for extended periods of 2 years at cryogenic temperatures, while an accuracy drop of 10.8% is observed at room temperature. These results highlight the potential of multilevel ePCMs in brain-inspired cryogenic computing applications, offering a promising avenue for the evolution of unconventional computing systems.

npj Unconventional ComputingVol. 1(1)
Institut polytechnique de Grenoble (FR), Centre National de la Recherche Scientifique (FR), Université de Sherbrooke (CA), Commissariat à l'Énergie Atomique et aux Énergies Alternatives (FR), CEA Grenoble (FR), STMicroelectronics (France) (FR), Spintronique et Technologie des Composants (FR), Université Grenoble Alpes (FR)
Indian National Science Academy, Université de Sherbrooke, Association Nationale de la Recherche et de la Technologie, Centre National de la Recherche Scientifique, École Centrale de Lyon
Climate action
Openalex Percentile: Top 14%
Advanced Memory and Neural Computing
1.88
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