Decomposition of Charge Loss Mechanisms in 3-D Nand Flash Memory: Impact of Cell Dimension via High-Temperature Long-Term Retention Characteristics
Decompositions of charge loss mechanisms in 3-D NAND flash memory with two different cell structures have been performed using high-temperature retention characteristics. It calculates emission rates of trap-to-band tunneling (TB) and band-to-trap tunneling (BT) to determine the dominant tunneling mechanisms. The lateral migration (LM) component is separated into the LM of holes (LMH) and electrons (LME) using the technology-computer-aided design (TCAD) simulation. The thicker blocking layer could lead to decreased vertical charge loss, and the shorter spacer could enhance the LM components.
Authors
- Donghwi Kim (ORCID: https://orcid.org/0000-0002-9888-948X)
- Hyun Chul Sagong (ORCID: https://orcid.org/0009-0003-0236-6698)
- Jungsik Kim (ORCID: https://orcid.org/0000-0001-7798-3381)
- Gilsang Yoon (ORCID: https://orcid.org/0000-0003-2525-0252)
- Jounghun Park (ORCID: https://orcid.org/0000-0001-7283-2787)
- Donghyun Go (ORCID: https://orcid.org/0000-0003-4595-3705)
- Jeong‐Soo Lee (ORCID: https://orcid.org/0000-0001-5473-2002)
Institutions
- Pohang University of Science and Technology (KR)
- Gyeongsang National University (KR)
- Korea Automotive Technology Institute (KR)
Publication Details
- Journal
- IEEE Transactions on Electron Devices
- Published
- 2024-09-02
- DOI
- https://doi.org/10.1109/ted.2024.3449251
- Citations
- 5
- Primary Topic
- Advanced Memory and Neural Computing
- Type
- article
- Field-Weighted Citation Impact
- 1.04