Characterization of Very Thin 3C-SiC Epilayers on Si
We verify experimentally to what extent the intensity of 3C-SiC TO peak in infrared reflectance spectrum can be used to estimate the thickness of extremely thin 3C-SiC epilayers on Si. The influence of several Si substrate characteristics (orientation, doping level, back-side surface preparation) on the peak calibration is discussed.
Authors
- Y. Cordier (ORCID: https://orcid.org/0000-0003-3720-9409)
- Marcin Zieliński (ORCID: https://orcid.org/0000-0003-1663-3868)
- Marc Bussel
- Marc Portail (ORCID: https://orcid.org/0000-0002-2305-6758)
- Adrien Michon (ORCID: https://orcid.org/0000-0002-8870-3696)
Institutions
- Université Côte d'Azur (FR)
- NOVASiC (France) (FR)
- Observatoire de la Côte d’Azur (FR)
Publication Details
- Journal
- Materials science forum
- Published
- 2024-08-21
- DOI
- https://doi.org/10.4028/p-qq8six
- Primary Topic
- Mechanical and Optical Resonators
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Horizon 2020 Framework Programme