Poly-SiC Characterization and Properties for SmartSiC™
SmartSiC™ products developed by Soitec in the past four years consist of a high quality monocrystalline silicon carbide (m-SiC) on the top of an ultra-low resistivity polycrystalline silicon carbide (p-SiC or poly-SiC), the interface being electrically conductive. These engineered substrates are intended to bring added value for vertical power devices compared to standard m-SiC, by leveraging the wide bandgap (WBG) properties of the m-SiC and the enhanced p-SiC properties of the base substrate. Thus, it is of paramount importance to understand and monitor the p-SiC properties. In this paper, we present its electrical resistivity, microstructure and texture measurements through SEM and EBSD, thermal conductivity through Laser Flash Anneal (LFA), and Young modulus measurements.
Authors
- Séverin Rouchier
- Sylvain Monnoye
- W. Schwarzenbach (ORCID: https://orcid.org/0000-0003-2821-0854)
- T. Barge
- Hugues Mank (ORCID: https://orcid.org/0000-0002-2884-8973)
- J. Widiez
- Damien Radisson
- S. Barbet
- Sidoine Odoul
- Alexandre Moulin
- Christophe Maleville
- Hugo Biard (ORCID: https://orcid.org/0000-0002-6451-9683)
- S. Ledrappier
- Valentine Chagneux
- Laetitia Coeurdray
- Mael Coche
- Kassem Alassaad
- Alexis Drouin
Institutions
- Soitec (France) (FR)
- Commissariat à l'Énergie Atomique et aux Énergies Alternatives (FR)
- Laboratoire d'Électronique des Technologies de l'Information (FR)
Publication Details
- Journal
- Materials science forum
- Published
- 2024-08-21
- DOI
- https://doi.org/10.4028/p-qdrkz7
- Citations
- 3
- Primary Topic
- Silicon Carbide Semiconductor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.63
Funders
- European Commission
- Electronic Components and Systems for European Leadership
- Horizon 2020 Framework Programme