High-Temperature Reorganization Behavior of Single-Crystalline Porous 4H-SiC Thin Foils
This work reports on the high-temperature reorganization behavior of single-crystalline porous 4H-silicon carbide (4H-SiC) thin foils. Porous 4H-SiC thin foils are realized via state-of-the-art photoelectrochemical etching in hydrofluoric (HF) acid solution enabling for the first time a released foil with a diameter of 2 inches. Subsequent annealing under inert gas atmosphere and comparison between samples suggests that a temperature of 1500 °C allows for various degrees of compactification across the foil surface, whereas at 1600 °C single crystallinity can be preserved.
Authors
- U. Schmid (ORCID: https://orcid.org/0000-0003-4528-8653)
- Appu Vengattoor Raghu (ORCID: https://orcid.org/0000-0002-6978-4902)
- Georg Pfusterschmied (ORCID: https://orcid.org/0000-0003-3810-7770)
- A. Kirnbauer (ORCID: https://orcid.org/0000-0001-9751-6414)
- Christopher Zellner
- Rainer Hahn (ORCID: https://orcid.org/0000-0002-7322-8108)
- Sabine Schwarz (ORCID: https://orcid.org/0009-0008-9310-2597)
- Markus Leitgeb (ORCID: https://orcid.org/0000-0003-1609-4497)
- Marco Perazzi (ORCID: https://orcid.org/0009-0007-2503-4329)
Institutions
- TU Wien (AT)
Publication Details
- Journal
- Materials science forum
- Published
- 2024-08-21
- DOI
- https://doi.org/10.4028/p-d0xoyc
- Citations
- 1
- Primary Topic
- Silicon Carbide Semiconductor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.21
Funders
- Österreichische Nationalstiftung für Forschung, Technologie und Entwicklung
- Christian Doppler Forschungsgesellschaft