Surface Structuring of Patterned 4H-SiC Surfaces Using a SiC/Si/SiC Sandwich Approach
Mesa- and trench-patterned surfaces of 4H-SiC(0001) 4°off wafers were structured in macrosteps using Si melting in a SiC-Si-SiC sandwich configuration. Si spreading difficulties were observed in the case of trench-patterned samples while the attempts on mesa-patterned ones were more successful. In the latter case, parallel macrosteps were formed on both the dry-etched and unetched areas though these macrosteps rarely cross the patterns edges. The proposed mechanism involved preferential etching at Si-C bilayer step edges and fast lateral propagation along the [1120] direction.
Authors
- Gabriel Ferro (ORCID: https://orcid.org/0000-0001-8225-3754)
- François Cauwet
- Ulrike Großner (ORCID: https://orcid.org/0000-0002-2495-8550)
- Marianne Etzelmüller Bathen (ORCID: https://orcid.org/0000-0002-6269-3530)
- Yann Jousseaume (ORCID: https://orcid.org/0000-0001-7057-0680)
- Piyush Kumar (ORCID: https://orcid.org/0000-0003-3321-2627)
Institutions
- Université de Lyon (FR)
- ETH Zurich (CH)
- Environnement, ville, société (FR)
Publication Details
- Journal
- Materials science forum
- Published
- 2024-08-21
- DOI
- https://doi.org/10.4028/p-auz0oi
- Primary Topic
- Silicon Carbide Semiconductor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Agence Nationale de la Recherche
- Eidgenössische Technische Hochschule Zürich