Application of Advanced Characterization Techniques to SmartSiC™ Product for Substrate-Level Device Performance Optimization
A review of the specific characterisation techniques developed and customized for SmartSiC™ substrates is given. A focus is made on thermal characterization of this engineered structure as well as its beneficial features with regards to bipolar degradation.
Authors
- W. Schwarzenbach (ORCID: https://orcid.org/0000-0003-2821-0854)
- Eric Guiot
- Damien Radisson
- Marcin Zieliński (ORCID: https://orcid.org/0000-0003-1663-3868)
- Audrey Chapelle
- Hugo Biard (ORCID: https://orcid.org/0000-0002-6451-9683)
- Roland B. Simon
- Enrica Cela
- Alexis Drouin
Institutions
- Soitec (France) (FR)
- Creative Thermal Solutions (US)
Publication Details
- Journal
- Materials science forum
- Published
- 2024-08-21
- DOI
- https://doi.org/10.4028/p-bf6cd7
- Citations
- 2
- Primary Topic
- Silicon Carbide Semiconductor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.42