Self-powered Schottky barrier photodetector with high responsivity based on homoepitaxial Ga<sub>2</sub>O<sub>3</sub> films by MOCVD
Abstract Ga 2 O 3 is a fast-developing wide band semiconductor for solar-blind ultraviolet photodetectors (PDs) applications. The heterojunction self-powered PDs fabricated from heteroepitaxial Ga 2 O 3 films currently have low responsivity and response speed. In this work, we fabricated Schottky barrier PDs based on homoepitaxially grown high quality Ga 2 O 3 films, which exhibited high performance with high responsivity at different bias voltages. In particular, the device achieves a responsivity of 90.3 mA W −1 , a photo-to-dark current ratio (PDCR) of 3.2 × 10 4 and a detectivity of 3.8 × 10 13 Jones at 0 V. In addition, a response time of superior to 5 ms is achieved. The results demonstrate the advantages of homoepitaxial Ga 2 O 3 films in the field of high-performance devices.
Authors
- Yihan Li (ORCID: https://orcid.org/0000-0003-0438-9693)
- Teng Jiao (ORCID: https://orcid.org/0000-0003-2515-0382)
- Zhengquan Li (ORCID: https://orcid.org/0000-0002-0084-5113)
- Xinming Dang
- Baolin Zhang (ORCID: https://orcid.org/0000-0002-2238-3351)
- Han Yu
- Guoxing Li (ORCID: https://orcid.org/0000-0002-4384-7063)
- Yu Han (ORCID: https://orcid.org/0000-0002-0955-0936)
- Yuantao Zhang (ORCID: https://orcid.org/0000-0002-8671-6979)
- Xin Dong
- Peiran Chen
Institutions
- Jilin University (CN)
- State Key Laboratory on Integrated Optoelectronics (CN)
Publication Details
- Journal
- Semiconductor Science and Technology
- Published
- 2024-09-02
- DOI
- https://doi.org/10.1088/1361-6641/ad763a
- Citations
- 8
- Primary Topic
- Ga2O3 and related materials
- Type
- article
- Field-Weighted Citation Impact
- 0.94
Funders
- National Key Research and Development Program of China