Largely‐Tuned Effective Work‐Function of Al/Graphene/SiO<sub>2</sub>/Si Junction with Electric Dipole Layer at Al/Graphene Interface

Abstract The effective work‐function of metal electrode is one of the major factors to determine the threshold voltage of metal/oxide/semiconductor junction. In this work, it is demonstrated experimentally that the effective work‐function of the Aluminum (Al) electrode in Al/SiO 2 /n‐Si junction increases significantly by ≈1.04 eV with the graphene interlayer inserted at Al/SiO 2 interface. The device‐physical analysis of solving Poisson equation analytically is provided when the flat‐band voltage is applied to the junction, supporting that the large tuning of Al effective work‐function may originate from the electric dipole layer formed by the off‐centric distribution of electron orbitals between Al and graphene layer. Our work suggests the feasibility of constructing the dual‐metal gate CMOS circuitry just by using Al electrodes with area‐specific underlying graphene interlayer.

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Publication Details

Journal
Advanced Electronic Materials
Published
2024-09-01
DOI
https://doi.org/10.1002/aelm.202400139
Primary Topic
Graphene research and applications
Type
article
Field-Weighted Citation Impact
0.00

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article

Largely‐Tuned Effective Work‐Function of Al/Graphene/SiO2/Si Junction with Electric Dipole Layer at Al/Graphene Interface

Daejin Eom, Hak Jun Kim, Gahyun Choi, Jiwan Kim et al.
Advanced Electronic Materials
Graphene research and applications
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Largely‐Tuned Effective Work‐Function of Al/Graphene/SiO2/Si Junction with Electric Dipole Layer at Al/Graphene Interface

Daejin Eom, Hak Jun Kim, Gahyun Choi, Jiwan Kim, Jaehyeong Jo, Jung‐Yong Lee, Eunseok Hyun, Kibog Park, Jinyoung Park, Hyunjae Park, Wonho Song
article en

Abstract

Abstract The effective work‐function of metal electrode is one of the major factors to determine the threshold voltage of metal/oxide/semiconductor junction. In this work, it is demonstrated experimentally that the effective work‐function of the Aluminum (Al) electrode in Al/SiO 2 /n‐Si junction increases significantly by ≈1.04 eV with the graphene interlayer inserted at Al/SiO 2 interface. The device‐physical analysis of solving Poisson equation analytically is provided when the flat‐band voltage is applied to the junction, supporting that the large tuning of Al effective work‐function may originate from the electric dipole layer formed by the off‐centric distribution of electron orbitals between Al and graphene layer. Our work suggests the feasibility of constructing the dual‐metal gate CMOS circuitry just by using Al electrodes with area‐specific underlying graphene interlayer.

Advanced Electronic MaterialsVol. 10(11)
Electronics and Telecommunications Research Institute (KR), Korea Research Institute of Standards and Science (KR), Ulsan National Institute of Science and Technology (KR), Bank of Korea (KR)
National Research Foundation, Ulsan National Institute of Science and Technology, National Research Foundation of Korea, Ministry of Science and ICT, South Korea, Samsung
Openalex Percentile: Top 91%
Graphene research and applications
DOIOpen Access PDFOpenAlex
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