Chiral silicene nanoribbons under transverse and vertical electric fields: Role of edge states

In this paper, we study the edge effects on the electronic transmission of chiral silicene nanoribbons (CSiNRs) using the tight binding method and Green’s function approach. The investigation covers SiNRs of different chiralities and widths under the influence of transverse and vertical electric fields. The results show significant variations in the electronic properties of SiNRs based on these parameters. The study further explores the role of edge states in the electronic properties of CSiNRs, a topic of recent interest due to potential applications for efficient transport of electrical or optical signals. The results contribute to the understanding of the anisotropic nature of electronic transport in silicene ribbons and open new avenues for the exploration of silicene-based electronic and optoelectronic devices.