Nanosilicon Stabilized With Ligands: Effect of High‐Energy Proton Beam on Luminescent Properties

ABSTRACT Silicon nanopowders with nitrogen heterocyclic carbene (NHC) and butyl as stabilizing ligands were synthesized by bottom‐up chemical methods. Transmission electron microscopy (TEM) was used to obtain nanoparticle size distribution with 1.8–2.5‐nm average diameter. Optical characteristics (photoluminescence [PL] and infrared [IR] absorption spectra) of samples were investigated as fabricated and on different steps of irradiation by high‐energy 22.5‐MeV protons. The PL spectral changes are slightly different for two cases, but in general, we can see a decrease in luminescence amplitude with fluence growth up to 4·10 14 cm −2 , mainly for NHC‐stabilized nanosilicon. Main mechanisms of radiation‐induced changes in nanosilicon sample optical properties are discussed by the joint use of PL and IR spectra analysis.

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Publication Details

Journal
Surface and Interface Analysis
Published
2024-08-30
DOI
https://doi.org/10.1002/sia.7354
Primary Topic
Luminescence Properties of Advanced Materials
Type
article
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Nanosilicon Stabilized With Ligands: Effect of High‐Energy Proton Beam on Luminescent Properties

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article

Nanosilicon Stabilized With Ligands: Effect of High‐Energy Proton Beam on Luminescent Properties

П. Б. Лагов, V. N. Zakharov, V. M. Senyavin, L. A. Aslanov, В. Б. Зайцев, Elena P. Romanteeva, Igor Kudryavtsev
article en

Abstract

ABSTRACT Silicon nanopowders with nitrogen heterocyclic carbene (NHC) and butyl as stabilizing ligands were synthesized by bottom‐up chemical methods. Transmission electron microscopy (TEM) was used to obtain nanoparticle size distribution with 1.8–2.5‐nm average diameter. Optical characteristics (photoluminescence [PL] and infrared [IR] absorption spectra) of samples were investigated as fabricated and on different steps of irradiation by high‐energy 22.5‐MeV protons. The PL spectral changes are slightly different for two cases, but in general, we can see a decrease in luminescence amplitude with fluence growth up to 4·10 14 cm −2 , mainly for NHC‐stabilized nanosilicon. Main mechanisms of radiation‐induced changes in nanosilicon sample optical properties are discussed by the joint use of PL and IR spectra analysis.

Surface and Interface AnalysisVol. 56(12)
National University of Science and Technology (RU), Lomonosov Moscow State University (RU)
Affordable and clean energy
Openalex Percentile: Top 91%
Luminescence Properties of Advanced Materials
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