An Erbium‐Doped Waveguide Amplifier on Thin Film Lithium Niobate with an Output Power Exceeding 100 mW
Abstract A high‐power thin film lithium niobate (TFLN) erbium‐doped waveguide amplifier (EDWA) is demonstrated with a maximum on‐chip output power of 113 mW and a gain of 16 dB. The on‐chip integrated EDWA is composed of large mode area (LMA) waveguide structures with a total length of 7 cm and a footprint of 1 × 1 cm 2 . Segmented LMA waveguides are connected with waveguide tapers to achieve on‐chip mode conversion, which maintains single‐mode propagation all over the EDWA even at the waveguide bends. The design leads to a significant increase in the amplified signal power by orders of magnitude and will open an avenue for applications such as on‐chip high‐power lasers and amplifier systems.
Authors
- Zhaoxiang Liu (ORCID: https://orcid.org/0000-0001-7016-5917)
- Haisu Zhang (ORCID: https://orcid.org/0000-0001-7823-6257)
- Zhiwei Fang (ORCID: https://orcid.org/0000-0002-8047-1763)
- Min Wang (ORCID: https://orcid.org/0000-0001-5321-3323)
- Jinming Chen (ORCID: https://orcid.org/0000-0003-3425-196X)
- Ya Cheng (ORCID: https://orcid.org/0000-0001-8269-5907)
- Jian Liu (ORCID: https://orcid.org/0000-0003-0756-2260)
- Rongbo Wu (ORCID: https://orcid.org/0000-0001-8012-0456)
- Rui Bao (ORCID: https://orcid.org/0009-0007-7876-8115)
Institutions
- Shanxi University (CN)
- Chinese Academy of Sciences (CN)
- Shandong Normal University (CN)
- Hefei University (CN)
- Shanghai Institute of Optics and Fine Mechanics (CN)
- East China Normal University (CN)
Publication Details
- Journal
- Laser & Photonics Review
- Published
- 2024-08-31
- DOI
- https://doi.org/10.1002/lpor.202400765
- Citations
- 39
- Primary Topic
- Photonic and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 8.14
Funders
- National Natural Science Foundation of China
- Science and Technology Commission of Shanghai Municipality
- East China Normal University
- Fundamental Research Funds for the Central Universities