Mechanism of local electric oxidation on two-dimensional MoS2 for resistive memory application
The manipulation and mechanism of two-dimensional (2D) transition metal dichalcogenides (TMDs) by external electric field are significant to the photoelectric properties. Herein, the 2D MoS<sub>2</sub> nanosheets were oxidized to form MoS<sub>2</sub>-MoO<sub>3</sub> local heterojunctions by an electric field, applied in multistable memristors for the proposal of NanoQR code. A modified thermal oxidation model was derived to reveal the mechanism of local electric oxidation on 2D MoS<sub>2</sub>. From current-voltage curves, the barrier height of the MoS<sub>2</sub> device showed an increase of 0.39 eV due to local oxidation after applying voltage for 480 s. Based on density-functional theory, the increase of barrier height was calculated as 0.38 eV between MoS<sub>2</sub>-MoS<sub>2</sub> and MoS<sub>2</sub>-MoO<sub>3</sub> supercells. The 2D MoS<sub>2</sub>-MoO<sub>3</sub> local heterojunctions were further applied as multistable memory storage at the nanoscale. The findings suggest a novel strategy for controlling local electric oxidation on 2D TMDs to manipulate the properties for the application of photoelectric memory nanodevices.
Authors
- Liang Chu
- Jinfeng Peng (ORCID: https://orcid.org/0000-0002-2066-167X)
- Hui Dong (ORCID: https://orcid.org/0000-0002-6444-1134)
- Junzheng Mu
- Xuejun Zheng
Institutions
- Guangdong University of Technology (CN)
- Xiangtan University (CN)
- Hangzhou Dianzi University (CN)
Publication Details
- Journal
- iScience
- Published
- 2024-08-31
- DOI
- https://doi.org/10.1016/j.isci.2024.110819
- Citations
- 1
- Primary Topic
- Advanced Memory and Neural Computing
- Type
- article
- Field-Weighted Citation Impact
- 0.21
Funders
- National Natural Science Foundation of China
- China Postdoctoral Science Foundation
- Natural Science Foundation of Hunan Province