SIMULTANEOUS EFFECT OF SDL AND MOSE2 LAYERS ON CIGS SOLAR CELL PERFORMANCE AND STRATEGY FOR IMPROVING ULTRA-THIN CIGS SOLAR CELL PERFORMANCE

In this paper, based on numerical simulation, the SCAPS-1D software was used to simultaneously study the influence of the surface defect layer (SDL) and the molybdenum diselenide layer (MoSe2) on the performance of the CIGS solar cell. These two defects layers are respectively formed at the front interface (CdS/CIGS) and the back interface (CIGS/ Mo) by atomic inter-diffusion. Simultaneous analysis of SDL and MoSe2 layers thickness revealed that optimum performance is achieved for 10 nm thickness of SDL layer and 35 nm thickness of MoSe2. A study of the gap energy revealed that optimum performance is obtained for 1.25 eV energy gap SDL layer and 1.35 eV energy gap of MoSe2 layer. Next, a performance study of the ultra-thin CIGS solar cell with optimized SDL and MoSe2 layers was carried out. It was found that the presence of the SDL and MoSe2 layers optimized improves the electrical performance of the ultra-thin CIGS solar cell.

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Publication Details

Journal
International Journal of Advanced Research
Published
2024-08-31
DOI
https://doi.org/10.21474/ijar01/19251
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
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article

SIMULTANEOUS EFFECT OF SDL AND MOSE2 LAYERS ON CIGS SOLAR CELL PERFORMANCE AND STRATEGY FOR IMPROVING ULTRA-THIN CIGS SOLAR CELL PERFORMANCE

Boureima Traoré, Daouda Oubda, François Zougmoré, Adama Zongo et al.
International Journal of Advanced Research
Chalcogenide Semiconductor Thin Films
article

SIMULTANEOUS EFFECT OF SDL AND MOSE2 LAYERS ON CIGS SOLAR CELL PERFORMANCE AND STRATEGY FOR IMPROVING ULTRA-THIN CIGS SOLAR CELL PERFORMANCE

Boureima Traoré, Daouda Oubda, François Zougmoré, Adama Zongo, Soumaïla Ouedraogo, Issiaka Sankara, Marcel Bawindsom Kébré
article en

Abstract

In this paper, based on numerical simulation, the SCAPS-1D software was used to simultaneously study the influence of the surface defect layer (SDL) and the molybdenum diselenide layer (MoSe2) on the performance of the CIGS solar cell. These two defects layers are respectively formed at the front interface (CdS/CIGS) and the back interface (CIGS/ Mo) by atomic inter-diffusion. Simultaneous analysis of SDL and MoSe2 layers thickness revealed that optimum performance is achieved for 10 nm thickness of SDL layer and 35 nm thickness of MoSe2. A study of the gap energy revealed that optimum performance is obtained for 1.25 eV energy gap SDL layer and 1.35 eV energy gap of MoSe2 layer. Next, a performance study of the ultra-thin CIGS solar cell with optimized SDL and MoSe2 layers was carried out. It was found that the presence of the SDL and MoSe2 layers optimized improves the electrical performance of the ultra-thin CIGS solar cell.

International Journal of Advanced ResearchVol. 12(08)
Affordable and clean energy
Openalex Percentile: Top 88%
Chalcogenide Semiconductor Thin Films
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