A Small Person Model in IGZO TFT Manufacturing Process Research on the Utilization of Semiconductor R&D

In the rapidly evolving display market, continuous technological advancements significantly influence the performance of thin-film transistors (TFTs).Research focusing on TFTs using oxide materials has attracted attention due to their diverse applications and excellent properties.Our research explicitly targets the production of indium-gallium-zinc-oxide (IGZO) TFTs using RF sputtering, a critical technology in oxide TFT manufacturing.We aim to optimize the manufacturing process by controlling variables such as power and gas flow to manage electrical characteristics effectively.Central to our approach is the application of the small person model from the Theory of Inventive Problem Solving (TRIZ).This model enables systematic analysis of the effects and changes associated with these variables.We anticipate positive developmental impacts on the semiconductor research and development industry by leveraging this research methodology.Our research aims to enhance the performance and versatility of IGZO TFTs and contribute broadly to semiconductor technology.Through TRIZ-based methodologies, we seek to optimize manufacturing processes and uncover innovative approaches that foster continuous advancement in the display and semiconductor industries.Rigorous experimentation and analysis play a crucial role in improving the efficiency and reliability of TFT technology in our approach.Ultimately, our research aims to optimize TFT manufacturing