Large‐Scale <i>p</i>‐Type Nonvolatile FGFET Memory Array Based on 2H‐MoTe₂

Abstract Transition metal dichalcogenides (TMDCs) based large‐scale p ‐type floating‐gate field‐effect transistor (FGFET) memory array has been fabricated for the first time. Chemical‐vapor‐deposition grown seamless co‐planes 2H‐ and 1T′‐MoTe 2 serve as the channel and source/drain electrodes, respectively. High‐κ Al 2 O 3 layers act as the tunneling and blocking layers. Arrayed Pd/Au serves as floating and top gates. The overall performances of the devices are excellent among those of the reported TMDCs‐based FGFET memories. Typical device exhibits large memory windows of ≈11.5 and 2.8 V and on/off ratios of ≈10 4 and 10 3 in gate voltage sweep ranges of ±10 and ±5 V, respectively, with long retention time of more than 10 5 s and good stress endurance of more than 5 × 10 4 programming/erasing cycles. The conductance of the device can be precisely tuned by applying short potentiative and depressive ±5 V voltage pulses. The device yields are 100% and 93% under ±10 and ±5 V, respectively. The whole fabrication process is free from the transfer process and compatible with traditional silicon technology. This work paves the way for the application of TMDCs in large‐scale integrated circuits.