Strain fingerprinting of exciton valley character in 2D semiconductors

Intervalley excitons with electron and hole wavefunctions residing in different valleys determine the long-range transport and dynamics observed in many semiconductors. However, these excitons with vanishing oscillator strength do not directly couple to light and, hence, remain largely unstudied. Here, we develop a simple nanomechanical technique to control the energy hierarchy of valleys via their contrasting response to mechanical strain. We use our technique to discover previously inaccessible intervalley excitons associated with K, Γ, or Q valleys in prototypical 2D semiconductors WSe<sub>2</sub> and WS<sub>2</sub>. We also demonstrate a new brightening mechanism, rendering an otherwise "dark" intervalley exciton visible via strain-controlled hybridization with an intravalley exciton. Moreover, we classify various localized excitons from their distinct strain response and achieve large tuning of their energy. Overall, our valley engineering approach establishes a new way to identify intervalley excitons and control their interactions in a diverse class of 2D systems.

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Publication Details

Journal
Nature Communications
Published
2024-08-30
DOI
https://doi.org/10.1038/s41467-024-51195-y
Citations
27
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
3.16

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article

Strain fingerprinting of exciton valley character in 2D semiconductors

Pablo Hernández López, Joakim Hagel, Cornelius Gahl, Christoph Schattauer et al.
27 citations
Nature Communications
2D Materials and Applications
3.16
article

Strain fingerprinting of exciton valley character in 2D semiconductors

Pablo Hernández López, Joakim Hagel, Cornelius Gahl, Christoph Schattauer, Florian Libisch, Bianca Höfer, Abhijeet M. Kumar, Douglas J. Bock, Sebastian Heeg, Ermin Malić, Roberto Rosati, Jan Kirchhof, Denis Yagodkin, Kirill I. Bolotin, Kenneth Burfeindt, Sarah Tobisch
article en
27 citations

Abstract

Intervalley excitons with electron and hole wavefunctions residing in different valleys determine the long-range transport and dynamics observed in many semiconductors. However, these excitons with vanishing oscillator strength do not directly couple to light and, hence, remain largely unstudied. Here, we develop a simple nanomechanical technique to control the energy hierarchy of valleys via their contrasting response to mechanical strain. We use our technique to discover previously inaccessible intervalley excitons associated with K, Γ, or Q valleys in prototypical 2D semiconductors WSe<sub>2</sub> and WS<sub>2</sub>. We also demonstrate a new brightening mechanism, rendering an otherwise "dark" intervalley exciton visible via strain-controlled hybridization with an intravalley exciton. Moreover, we classify various localized excitons from their distinct strain response and achieve large tuning of their energy. Overall, our valley engineering approach establishes a new way to identify intervalley excitons and control their interactions in a diverse class of 2D systems.

Nature CommunicationsVol. 15(1)
TU Wien (AT), Philipps University of Marburg (DE), Humboldt-Universität zu Berlin (DE), Chalmers University of Technology (SE), Freie Universität Berlin (DE), Delft University of Technology (NL)
Deutsche Forschungsgemeinschaft, Bundesministerium für Bildung und Forschung, Austrian Science Fund
Sustainable cities and communities
Openalex Percentile: Top 5%
2D Materials and Applications
3.16
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