An Alternative Junction-to-Case Thermal Resistance Test Method for High Power Press-Pack IGBTs

Press-pack insulated gate bipolar transistors (PP IGBTs) is well suited for high-voltage, high-power applications due to their double-side cooling, ease of series connection, and higher power density. It is very important to measure the junction-to-case thermal resistance (<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">R</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">thjc</sub>) for evaluating thermal performance, with high accuracy. However, the existing thermal resistance test methods will have the problem of low accuracy when it is used in PP IGBTs. In this article, a new thermal resistance test method is proposed based on the transient dual-interface method (TDIM), different from traditional TDIM, which can obtain two transient thermal impedance (<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Z</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sub>) curves without disassembling the fixture, and determine the <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">R</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">thjc</sub> through the separation point. The 4500 V 3000 A StakPak PP IGBTs is used as the measurement object. The results show that compared with the traditional TDIM, the new method is very simple to operate, and the test results are more accurate than thermocouples, which is more suitable for PP IGBTs. The single-side thermal resistance of the PP IGBTs is analyzed, and the emitter side is even worse due to the disc spring. The <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">R</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">thjc</sub> calculated by single-side thermal resistance is close to the proposed method, but fluctuates widely.

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Publication Details

Journal
IEEE Transactions on Power Electronics
Published
2024-08-30
DOI
https://doi.org/10.1109/tpel.2024.3452247
Citations
1
Primary Topic
Silicon Carbide Semiconductor Technologies
Type
article
Field-Weighted Citation Impact
0.21

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article

An Alternative Junction-to-Case Thermal Resistance Test Method for High Power Press-Pack IGBTs

Maoyang Pan, Peng Liu, Weibang Li, Yongzhang Huang et al.
1 citations
IEEE Transactions on Power Electronics
Silicon Carbide Semiconductor Technologies
0.21
article

An Alternative Junction-to-Case Thermal Resistance Test Method for High Power Press-Pack IGBTs

Maoyang Pan, Peng Liu, Weibang Li, Yongzhang Huang, Erping Deng, Yushan Zhao, Yuxing Yan, Hongyu Sun, Yuan Sun
article en
1 citations

Abstract

Press-pack insulated gate bipolar transistors (PP IGBTs) is well suited for high-voltage, high-power applications due to their double-side cooling, ease of series connection, and higher power density. It is very important to measure the junction-to-case thermal resistance (<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">R</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">thjc</sub>) for evaluating thermal performance, with high accuracy. However, the existing thermal resistance test methods will have the problem of low accuracy when it is used in PP IGBTs. In this article, a new thermal resistance test method is proposed based on the transient dual-interface method (TDIM), different from traditional TDIM, which can obtain two transient thermal impedance (<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Z</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sub>) curves without disassembling the fixture, and determine the <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">R</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">thjc</sub> through the separation point. The 4500 V 3000 A StakPak PP IGBTs is used as the measurement object. The results show that compared with the traditional TDIM, the new method is very simple to operate, and the test results are more accurate than thermocouples, which is more suitable for PP IGBTs. The single-side thermal resistance of the PP IGBTs is analyzed, and the emitter side is even worse due to the disc spring. The <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">R</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">thjc</sub> calculated by single-side thermal resistance is close to the proposed method, but fluctuates widely.

IEEE Transactions on Power ElectronicsVol. 39(12)
North China Electric Power University (CN), Hefei University of Technology (CN), NARI Group (China) (CN), State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources
National Natural Science Foundation of China
Affordable and clean energy
Openalex Percentile: Top 49%
Silicon Carbide Semiconductor Technologies
0.21
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