Resisting oxygen/moisture permeation in quantum dots converted optoelectronic devices
Abstract Quantum dots (QDs) are promising semiconducting luminous nanocrystals with superior optoelectronic characteristics. Unfortunately, these nanocrystals are fragile when exposed to humid environment. Oxygen and moisture molecules could erode QDs’ structure and degrade their luminous ability, which severely hinders the wide application of QDs in optoelectronic devices. Therefore, it is significantly important to resist oxygen/moisture permeation in the packaging of these QDs converted devices. In this review, we briefly introduce the oxygen/moisture-induced degradation mechanism of QDs and then the permeation theories. Subsequently, we review some strategies for resisting oxygen/moisture permeation from a packaging perspective, and analyze them with the permeation theories. Finally, we outline some future directions for developing efficient oxygen/moisture resistance solutions of QDs converted optoelectronic devices.
Authors
- Xiaobing Luo (ORCID: https://orcid.org/0000-0002-6423-9868)
- Xuan Yang (ORCID: https://orcid.org/0000-0002-6319-8072)
- Bin Xie (ORCID: https://orcid.org/0000-0001-9031-5900)
Institutions
- Huazhong University of Science and Technology (CN)
Publication Details
- Journal
- Journal of Physics D Applied Physics
- Published
- 2024-08-30
- DOI
- https://doi.org/10.1088/1361-6463/ad759d
- Citations
- 2
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 0.42
Funders
- National Natural Science Foundation of China