Numerical Analysis of Wafer Temperature with Respect to Radiation Variation in CVD Chamber

In this study, the temperature within a CVD chamber at 10 Torr was numerically investigated using Computational Fluid Dynamics (CFD). A detailed threedimensional (3D) representation of the chamber illustrates the deposition due to CVD on the showerhead and chamber walls. In this study, the changes in the average temperature and temperature variation of a wafer, when the surface emissivity changes due to this deposition, are examined. Additionally, the effects of varying the process gap, which is the distance between the wafer and showerhead, on the temperature distribution of the wafer are analyzed. Based on these analyses, in this study, specific process variables are proposed to optimize the average temperature and temperature uniformity of the wafer. Finally, methods to mitigate the impact of changes in emissivity and ensure consistent wafer quality are proposed.