Scalable Atomic Arrays for Spin‐Based Quantum Computers in Silicon

Semiconductor spin qubits combine excellent quantum performance with the prospect of manufacturing quantum devices using industry-standard metal-oxide-semiconductor (MOS) processes. This applies also to ion-implanted donor spins, which further afford exceptional coherence times and large Hilbert space dimension in their nuclear spin. Here multiple strategies are demonstrated and integrated to manufacture scale-up donor-based quantum computers. <sup>31</sup>PF<sub>2</sub> molecule implants are used to triple the placement certainty compared to <sup>31</sup>P ions, while attaining 99.99% confidence in detecting the implant. Similar confidence is retained by implanting heavier atoms such as <sup>123</sup>Sb and <sup>209</sup>Bi, which represent high-dimensional qudits for quantum information processing, while Sb<sub>2</sub> molecules enable deterministic formation of closely-spaced qudits. The deterministic formation of regular arrays of donor atoms with 300 nm spacing is demonstrated, using step-and-repeat implantation through a nano aperture. These methods cover the full gamut of technological requirements for the construction of donor-based quantum computers in silicon.

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Publication Details

Journal
Advanced Materials
Published
2024-08-29
DOI
https://doi.org/10.1002/adma.202405006
Citations
10
Primary Topic
Quantum and electron transport phenomena
Type
article
Field-Weighted Citation Impact
3.38

Funders

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article

Scalable Atomic Arrays for Spin‐Based Quantum Computers in Silicon

David N. Jamieson, Hannes R. Firgau, Edwin Mayes, Alexander Jakob et al.
10 citations
Advanced Materials
Quantum and electron transport phenomena
3.38
article

Scalable Atomic Arrays for Spin‐Based Quantum Computers in Silicon

David N. Jamieson, Hannes R. Firgau, Edwin Mayes, Alexander Jakob, Simon G. Robson, D.R. Holmes, Andrea Morello, Jeffrey C. McCallum, D. Spemann, Vincent Mourik, M. Posselt, Vivien Schmitt
article en
10 citations

Abstract

Semiconductor spin qubits combine excellent quantum performance with the prospect of manufacturing quantum devices using industry-standard metal-oxide-semiconductor (MOS) processes. This applies also to ion-implanted donor spins, which further afford exceptional coherence times and large Hilbert space dimension in their nuclear spin. Here multiple strategies are demonstrated and integrated to manufacture scale-up donor-based quantum computers. <sup>31</sup>PF<sub>2</sub> molecule implants are used to triple the placement certainty compared to <sup>31</sup>P ions, while attaining 99.99% confidence in detecting the implant. Similar confidence is retained by implanting heavier atoms such as <sup>123</sup>Sb and <sup>209</sup>Bi, which represent high-dimensional qudits for quantum information processing, while Sb<sub>2</sub> molecules enable deterministic formation of closely-spaced qudits. The deterministic formation of regular arrays of donor atoms with 300 nm spacing is demonstrated, using step-and-repeat implantation through a nano aperture. These methods cover the full gamut of technological requirements for the construction of donor-based quantum computers in silicon.

Advanced MaterialsVol. 36(40)
University of Technology Sydney (AU), The University of Melbourne (AU), Helmholtz-Zentrum Dresden-Rossendorf (DE), UNSW Sydney (AU), Centre for Quantum Computation and Communication Technology (AU), Leibniz Institute of Surface Engineering (DE), RMIT University (AU)
University of Melbourne, Centre of Excellence for Quantum Computation and Communication Technology, Australian Research Council, Army Research Office
Industry, innovation and infrastructure
Openalex Percentile: Top 7%
Quantum and electron transport phenomena
3.38
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