Corrosion‐Resistant Ultrathin Cu Film Deposited on N‐Doped Amorphous Carbon Film Substrate and Its Use for Crumpleable Circuit Board
Copper (Cu) is widely used as an industrial electrode due to its high electrical conductivity, mechanical properties, and cost-effectiveness. However, Cu is susceptible to corrosion, which degrades device performance over time. Although various methods (alloying, physical passivation, surface treatment, etc.) are introduced to address the corrosion issue, they can cause decreased conductivity or vertical insulation. Here, using the nitrogen-doped amorphous carbon (a-C:N) thin film is proposed as a substrate on which Cu is directly deposited. This simple method significantly inhibits corrosion of ultrathin Cu (<20 nm) films in humid conditions, enabling the fabrication of ultrathin electronic circuit boards without corrosion under ambient conditions. This study investigates the origin of corrosion resistance through comprehensive microscopic/spectroscopic characterizations and density-functional theory (DFT) calculations: i) diffusion of Cu atoms into the a-C:N driven by stable C-Cu-N bond formation, ii) diffusion of N atoms from the a-C:N to the Cu layer heading the top surface, which is the thermodynamically preferred location for N, and iii) the doped N atoms in Cu layer suppress the inclusion of O into the Cu lattice. By leveraging the ultrathinness and deformability of the circuit board, a transparent electrode and a crumpleable LED lighting device are demonstrated.
Authors
- Aloysius Soon (ORCID: https://orcid.org/0000-0002-6273-9324)
- Woosun Jang (ORCID: https://orcid.org/0000-0003-1274-1714)
- Sangseob Lee (ORCID: https://orcid.org/0000-0002-5023-0192)
- Unyong Jeong (ORCID: https://orcid.org/0000-0002-7519-7595)
- Se‐Young Jeong (ORCID: https://orcid.org/0000-0003-1019-4403)
- Jaeik Kwak
- Ik‐Soo Kim
- Minsik Kong (ORCID: https://orcid.org/0000-0002-0865-7635)
- Dong Wook Kim (ORCID: https://orcid.org/0000-0002-2454-4083)
- Chae‐Eun Shim (ORCID: https://orcid.org/0009-0000-8788-4598)
Institutions
- Pohang University of Science and Technology (KR)
- Harvard University (US)
- Yonsei University (KR)
- Hodges University (US)
- Gordon Center for Medical Imaging (US)
- Massachusetts General Hospital (US)
- Max Planck Institute for Intelligent Systems (DE)
Publication Details
- Journal
- Advanced Science
- Published
- 2024-08-29
- DOI
- https://doi.org/10.1002/advs.202403587
- Citations
- 5
- Primary Topic
- ZnO doping and properties
- Type
- article
- Field-Weighted Citation Impact
- 0.59
Funders
- National Research Foundation
- Ministry of Science and ICT, South Korea
- National Supercomputing Center, Korea Institute of Science and Technology Information