Bessel‐Beam Direct Write of the Etch Mask in a Nano‐Film of Alumina for High‐Efficiency Si Solar Cells

Large surface area applications such as high efficiency >26% solar cells require surface patterning with 1–10 μm periodic patterns at high fidelity over areas (before up scaling to ) to perform at, or exceed, the Lambertian (ray optics) limit of light trapping. Herein, a pathway is shown to high‐resolution sub‐1 μm etch mask patterning by ablation using direct femtosecond laser writing performed at room conditions (without the need for a vacuum‐based lithography approach). A Bessel beam is used to alleviate the required high surface tracking tolerance for ablation of 0.3–0.8 μm diameter holes in 40 nm alumina –mask at high writing speed, 7.5 cm s −1 ; a patterning rate 1 cm 2 per 20 min. Plasma etching protocol was optimized for a zero‐mesa formation of photonic‐crystal‐trapping structures and smooth surfaces at the nanoscale level. The maximum of minority carrier recombination time of 2.9 ms was achieved after the standard wafer passivation etch; resistivity of the wafer was 3.5 Ω cm. Scaling up in area and throughput of the demonstrated approach is outlined.

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Publication Details

Journal
Advanced Engineering Materials
Published
2024-08-29
DOI
https://doi.org/10.1002/adem.202400711
Citations
5
Primary Topic
Silicon and Solar Cell Technologies
Type
article
Field-Weighted Citation Impact
1.04

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article

Bessel‐Beam Direct Write of the Etch Mask in a Nano‐Film of Alumina for High‐Efficiency Si Solar Cells

Sajeev John, Orestas Ulčinas, Soon Hock Ng, Vytautas Sabonis et al.
5 citations
Advanced Engineering Materials
Silicon and Solar Cell Technologies
1.04
article

Bessel‐Beam Direct Write of the Etch Mask in a Nano‐Film of Alumina for High‐Efficiency Si Solar Cells

Sajeev John, Orestas Ulčinas, Soon Hock Ng, Vytautas Sabonis, Gediminas Seniutinas, Robby Peibst, Saulius Juodkazis, Nguyen Hoai An Le, Mindaugas Mikutis, Udo Römer, Dominyka Stonytė, Michael Rienäcker, Tomas A. Katkus, Justas Baltrukonis, Jan Krügener, Yoshiaki Nishijima, Zahra Khajehsaeidimahabadi, Haoran Mu
article en
5 citations

Abstract

Large surface area applications such as high efficiency >26% solar cells require surface patterning with 1–10 μm periodic patterns at high fidelity over areas (before up scaling to ) to perform at, or exceed, the Lambertian (ray optics) limit of light trapping. Herein, a pathway is shown to high‐resolution sub‐1 μm etch mask patterning by ablation using direct femtosecond laser writing performed at room conditions (without the need for a vacuum‐based lithography approach). A Bessel beam is used to alleviate the required high surface tracking tolerance for ablation of 0.3–0.8 μm diameter holes in 40 nm alumina –mask at high writing speed, 7.5 cm s −1 ; a patterning rate 1 cm 2 per 20 min. Plasma etching protocol was optimized for a zero‐mesa formation of photonic‐crystal‐trapping structures and smooth surfaces at the nanoscale level. The maximum of minority carrier recombination time of 2.9 ms was achieved after the standard wafer passivation etch; resistivity of the wafer was 3.5 Ω cm. Scaling up in area and throughput of the demonstrated approach is outlined.

Advanced Engineering MaterialsVol. 26(21)
Leibniz University Hannover (DE), Tokyo Institute of Technology (JP), Vilnius University (LT), Yokohama National University (JP), University of Toronto (CA), Institut für Solarenergieforschung (DE), Swinburne University of Technology (AU)
Australian National Fabrication Facility, Swinburne University of Technology, Australian Research Council
Affordable and clean energy
Openalex Percentile: Top 23%
Silicon and Solar Cell Technologies
1.04
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