Polysilicon Modulator Utilizing CMOS-Compatible Local Excimer Laser Annealing Technology
In this paper, we demonstrated the improvement of response speed of doped-silicon modulators by localized excimer-laser annealing of the active region while preserving the integrity of the intrinsic waveguide. The racetrack modulator after laser annealing exhibits an extinction ratio of nearly 17 dB with a rising /falling time of 0.82/6.87 μs and a π phase shift power Pπ of 27.2 mW. The utilization of a low-temperature deposited polysilicon modulator combined with a localized excimer laser annealing scheme facilitates the monolithic integration of 3D optoelectronic chips.
Authors
- Boshu Sun
- Zequn Chen (ORCID: https://orcid.org/0000-0002-2931-9854)
- Jialing Jian (ORCID: https://orcid.org/0000-0001-6809-6588)
- Kunhao Lei
- Hongtao Lin (ORCID: https://orcid.org/0000-0001-7432-3644)
- Lan Li (ORCID: https://orcid.org/0000-0002-9097-9157)
- Li‐Chun Wang (ORCID: https://orcid.org/0000-0002-7883-6217)
- Junying Li (ORCID: https://orcid.org/0000-0003-0405-9352)
- Maoliang Wei (ORCID: https://orcid.org/0009-0001-6965-8180)
- Bo Tang (ORCID: https://orcid.org/0000-0002-6724-8428)
- Yuting Ye (ORCID: https://orcid.org/0009-0004-2841-8318)
- Kangjian Bao
Institutions
- Chinese Academy of Sciences (CN)
- Westlake University (CN)
- Institute of Microelectronics (CN)
- Zhejiang Lab (CN)
- University of Chinese Academy of Sciences (CN)
- Zhejiang University (CN)
Publication Details
- Journal
- Journal of Lightwave Technology
- Published
- 2024-08-29
- DOI
- https://doi.org/10.1109/jlt.2024.3451963
- Citations
- 1
- Primary Topic
- Integrated Circuits and Semiconductor Failure Analysis
- Type
- article
- Field-Weighted Citation Impact
- 0.21
Funders
- National Natural Science Foundation of China
- Chinese Academy of Sciences
- University of Chinese Academy of Sciences