Enhanced Thermoelectric Performance of S-Doped AgSbTe<sub>2</sub> via Synergistic Optimization of Electrical and Thermal Transport
P-type AgSbTe2 exhibits great potential due to its high thermoelectric (TE) performance in the medium-temperature range. It is of importance from both scientific and application perspectives to enhance the TE performance of AgSbTe2 by substituting the environmentally harmful and expensive Te with the eco-friendly and cost-effective element S. In this work, we report an enhanced maximum figure of merit zT value of 1.31 at 573 K and an average zT value of 0.87 in the temperature range of 300–623 K for S-doped AgSbTe2, which are increases of about 23% and 30% than those of the undoped sample through the synergistic optimization of the electrical and thermal transport properties. S dopant suppresses the formation of Ag2Te precipitates at the grain boundaries, increases the p-type carrier concentration, and enlarges effective mass, which promotes the power factor. Meanwhile, the thermal conductivities of AgSbTe2–xSx samples decrease due to enhanced phonon scattering caused by S doping. This work demonstrates that the eco-friendly and low-cost substitution for Te with S is promising to advance the applications of AgSbTe2-based TE materials.
Authors
- Yongzhao Feng
- Jikang Jian (ORCID: https://orcid.org/0000-0001-5752-7282)
- Xiaofang Lai (ORCID: https://orcid.org/0000-0001-8520-6742)
- Yi Pan (ORCID: https://orcid.org/0000-0001-7911-7962)
- Hong Zhang (ORCID: https://orcid.org/0000-0002-0430-2319)
- Shiyu Wang (ORCID: https://orcid.org/0009-0007-5888-4119)
Institutions
- Guangdong University of Technology (CN)
Publication Details
- Journal
- The Journal of Physical Chemistry C
- Published
- 2024-08-20
- DOI
- https://doi.org/10.1021/acs.jpcc.4c04467
- Citations
- 2
- Primary Topic
- Advanced Thermoelectric Materials and Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.23