Assessment of the errors of high-fidelity two-qubit gates in silicon quantum dots

Abstract Achieving high-fidelity entangling operations between qubits consistently is essential for the performance of multi-qubit systems. Solid-state platforms are particularly exposed to errors arising from materials-induced variability between qubits, which leads to performance inconsistencies. Here we study the errors in a spin qubit processor, tying them to their physical origins. We use this knowledge to demonstrate consistent and repeatable operation with above 99% fidelity of two-qubit gates in the technologically important silicon metal-oxide-semiconductor quantum dot platform. Analysis of the physical errors and fidelities in multiple devices over extended periods allows us to ensure that we capture the variation and the most common error types. Physical error sources include the slow nuclear and electrical noise on single qubits and contextual noise that depends on the applied control sequence. Furthermore, we investigate the impact of qubit design, feedback systems and robust gate design to inform the design of future scalable, high-fidelity control strategies. Our results highlight both the capabilities and challenges for the scaling-up of silicon spin-based qubits into full-scale quantum processors.

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Publication Details

Journal
Nature Physics
Published
2024-08-20
DOI
https://doi.org/10.1038/s41567-024-02614-w
Citations
45
Primary Topic
Quantum and electron transport phenomena
Type
article
Field-Weighted Citation Impact
15.19

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article

Assessment of the errors of high-fidelity two-qubit gates in silicon quantum dots

Kohei M. Itoh, Arne Laucht, Jesús D. Cifuentes, Chih Hwan Yang et al.
45 citations
Nature Physics
Quantum and electron transport phenomena
15.19
article

Assessment of the errors of high-fidelity two-qubit gates in silicon quantum dots

Kohei M. Itoh, Arne Laucht, Jesús D. Cifuentes, Chih Hwan Yang, Andrew S. Dzurak, Stefan Seritan, Ross C. C. Leon, Wee Han Lim, MengKe Feng, Robin Blume-Kohout, Fay E. Hudson, Amanda E. Seedhouse, Andrea Morello, Stephen D. Bartlett, Kenneth Rudinger, W. Huang, Tuomo Tanttu, Christopher C. Escott, Nard Dumoulin Stuyck, Will Gilbert, Corey Ostrove, M. L. W. Thewalt, André Saraiva, Jonathan Y. Huang, N. V. Abrosimov, Hans-Joachim Pohl, Rocky Y. Su
article en
45 citations

Abstract

Abstract Achieving high-fidelity entangling operations between qubits consistently is essential for the performance of multi-qubit systems. Solid-state platforms are particularly exposed to errors arising from materials-induced variability between qubits, which leads to performance inconsistencies. Here we study the errors in a spin qubit processor, tying them to their physical origins. We use this knowledge to demonstrate consistent and repeatable operation with above 99% fidelity of two-qubit gates in the technologically important silicon metal-oxide-semiconductor quantum dot platform. Analysis of the physical errors and fidelities in multiple devices over extended periods allows us to ensure that we capture the variation and the most common error types. Physical error sources include the slow nuclear and electrical noise on single qubits and contextual noise that depends on the applied control sequence. Furthermore, we investigate the impact of qubit design, feedback systems and robust gate design to inform the design of future scalable, high-fidelity control strategies. Our results highlight both the capabilities and challenges for the scaling-up of silicon spin-based qubits into full-scale quantum processors.

Nature PhysicsVol. 20(11)
The University of Sydney (AU), Simon Fraser University (CA), Sandia National Laboratories California (US), Keio University (JP), UNSW Sydney (AU), ARC Centre of Excellence for Engineered Quantum Systems (AU), Leibniz Institute for Crystal Growth (DE)
U.S. Department of Energy, Australian National Fabrication Facility, University of New South Wales, University of Sydney, National Nuclear Security Administration, Australian Research Council, Advanced Scientific Computing Research, Army Research Office, Sandia National Laboratories
Industry, innovation and infrastructure
Openalex Percentile: Top 1%
Quantum and electron transport phenomena
15.19
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