Characterization of Hot-carrier Enhanced Pixels for Out-of-band CMOS Camera
We present optoelectronic characterization of ntype silicon pixels with a suite of plasmonic designs intended to generate and detect electron-hole pairs from incident 1550 nm photons.
Authors
- Evan M. Anderson (ORCID: https://orcid.org/0000-0002-3771-3085)
- Henry M. Spotnitz (ORCID: https://orcid.org/0000-0003-2869-0237)
- David Bruce Burckel (ORCID: https://orcid.org/0000-0003-2222-047X)
- DeAnna Campbell (ORCID: https://orcid.org/0000-0002-3505-1065)
- Raktim Sarma (ORCID: https://orcid.org/0000-0002-7288-2044)
- Zachary Piontkowski (ORCID: https://orcid.org/0000-0002-6282-0106)
- Mason Risley
- Nickolas J. Karl
Institutions
- Sandia National Laboratories (US)
Publication Details
- Published
- 2024-08-14
- DOI
- https://doi.org/10.1109/rapid60772.2024.10646915
- Primary Topic
- CCD and CMOS Imaging Sensors
- Type
- article
- Field-Weighted Citation Impact
- 0.00